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$3.00 Shipping Condition: New Location: China Maker：EUDYNA [Eudyna Devices Inc]. ： FLC107WG. The FLC107WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency ... morerange as it provides superior power, gain, and efficiency.
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$7.00 Shipping Condition: New Location: Hollywood, United States Lot of 100 pcs MP13B (МП13Б) PNP Germanium Transistors, New. MP13, MP13B, MP14, MP14A, MP14B, MP15, MP15A, MP16, MP16A, MP16B, MP16YaI, MP16YaII, MP21, ... moreMP21A, MP21B, MP21V, MP21G, MP21D, MP21E, MP25, MP25A, MP25B, MP26, MP26A, MP26B, P27, P27A, P27B, P28, P29, P29A, P30, MP39, MP39B, MP40, MP40A, MP41, MP41A, MP42, MP42A, MP42B, P401, P402, P403, P416, P416A, P416B, P417, P423, GT308A, GT308B, GT308V, GT309E, GT310B, GT313A, GT320A, GT320B, GT320V, GT321V.
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$6.00 Shipping Condition: New Location: Stanton, United States SEMICONDUCTOR MATERIAL SILICON. (NON-CORE DATA) SPECIFICATION/STANDARD DATA 80131-RELEASE4716 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION. LOT 32089 ... moreF27.
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Free Shipping Condition: New Location: Huntington Beach, United States 3 uninsulated wire lead. Overall Length. 175.0 deg celsius ambient air.
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Free Shipping Condition: New Location: Chula Vista, United States The third picture suggests a garden vareity 2N series, but JANTX precedes the text. General Dynamics N-Ch. Mil-Spec FET Transistor TO-5 JANTX Qual. 2N4856 ... more261223-1. DBA GENERAL DYNAMICS OTS SEATTLE DIV SEATTLE OPERATIONS.
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$3.00 Shipping Condition: New – Open box Location: China Ruggedness Tested at Rated Output Power. Output Power — 300 W. Gain — 14 dB (16 dB Typ). Efficiency — 50%. We will reply you ASAP.
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$2.00 Shipping Condition: New Location: China No any handle fees.
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Free Shipping Condition: New – Open box Location: Stanton, United States (1 PC) RCA JAN2N3441 Bipolar Junction Transistor NPN Type TO-66 NSN# 5961-00-054-4141. JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE ... moreDESIGNATION TO-66. ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR.
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$5.40 Shipping Condition: Used Location: Columbus, United States Condition is Used. The NPTB00004A GaN HEMT is a wideband. The NPTB00004A is ideally suited for defense. GaN on Si HEMT D-Mode Transistor. Tunable ... morefrom DC - 6 GHz. transistor optimized for DC - 6 GHz operation.
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$3.00 Shipping Condition: New Location: China ： PTF10009. Download ：85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor. amplifier applications to 1.0 GHz. It operates at 50% efficiency and. - Output ... morePower = 85 Watts. The PTF 10009 is an 85 Watt LDMOS FET intended for large signal.
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$10.40 Shipping Condition: New Location: Ukraine Similar to the GC500 / AC128. h fe 30.80. I C max 500mA.
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$10.63 Shipping Condition: Neu Location: Holzkirchen, Germany PT908-7C-R NPN IR VIS Empfänger Fototransistor. IR Infrarot Module. 2 x PT908-7C-R NPN IR VIS Empfänger Fototransistor Infrared Phototransistor 450-1100nm ... moreReceiver Diode. 2 Stück PT908-7C-R 450-1100nm Fototransistor.
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$13.77 Shipping Condition: Neu Location: München, Germany NPN POWER TRANSISTOR. Product Family: NPN POWER TRANSISTOR. 10 Stück / 10 pieces STBV45DT-AP.
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$3.00 Shipping Condition: New Location: 福田区, China Its primary band is 1.8 to 2.3 GHz, however with different matching, 60MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 ... moreGHz. • High linear gain: 13 dB TYP. • High power added efficiency : 40 % TYP.
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$3.00 Shipping Condition: New Location: China The BLP9G0722-20 from Ampleon is a 28 V LDMOS power transistor that operates from 400 MHz to 2700 MHz. It provides an output power of 20 watts with high ... morepower gain and has excellent thermal stability.
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$3.00 Shipping Condition: New Location: China ： PTF10154. Download ：85 Watts, 1.93 - 1.99 GHz GOLDMOS Field Effect Transistor. The PTF 10154 is an internally matched 85–watt GOLDMOS FET. intended ... morefor CDMA and TDMA applications from 1.93 to 1.99 GHz.
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$10.00 Shipping Condition: New Location: Ukraine Transistors MP21D germanium alloyed p-n-p switching low-frequency low-power. The main technical characteristics of the MP21D transistor The mass of the ... moretransistor is not more than 2.0. •Transistor structure: p-n-p.
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Free Shipping Condition: New Location: Fort Collins, United States Output load current:
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Free Shipping Condition: New Location: Huntington Beach, United States Transistor PNP bipolar 45V, 0.2A, 0.3/0.75W, TO-18, 10dB. Quantity:12 pieces = (1 lot of 12 pieces).
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$3.00 Shipping Condition: New – Open box Location: Sparks, United States ( Lot Of 2 ) Fairchild U5J7727333 NOS Optoelectronic Device, Excellent, Vintage. Fast shipping
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$3.57 Shipping Condition: Brand New Location: China These Power Transistors can provide a reliable platform for electronic circuit prototyping and development. Suitable for a wide range of applications, ... moreincluding DIY electronic projects, industrial automation, power management systems, and hobbyists learning about transistor applications.
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$3.00 Shipping Condition: New Location: China : MRF1570NT1 M1570N. Specified Performance @ 470 MHz, 12.5 Volts. Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive. Output Power: 70 ... moreWatts. Efficiency: 60%. We will reply you ASAP. Power Gain: 11.5 dB.
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$4.00 Shipping Condition: New Location: Roanoke, United States
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$2.99 Shipping Condition: New Location: China 1PCS RD15HVF1 175MHz 15W TO-220 RF Devices High Power MOSFET RD15 VHF/UHF MOS.
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Free Shipping Condition: New Location: Kissimmee, United States Transistor Model: 2N7002 / 7002 / 72K / 702 / MOS N / 2N7002K. Base Product Number: 2N7002. Type: MOSFET N-Channel. Installation Type: SMD Surface Mounted, ... morePins Are Ready To Solder. Soldering, Micro-soldering, Heatwave, Reflow.
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Free Shipping Condition: New Location: Sallisaw, United States The order will be processed and completed by automatic warehouse system within 5 minutes. - We're happy to help. Order Cancellation Policy .
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Free Shipping Condition: New Location: Hong Kong SAR China FMUSER Original New MRFE6VP61K25H RF Power Transistor High Power MOSFET Transistor LDMOS For 1000w FM transmitter. MRFE6VP61K25H: 1.8-600 MHz, 1250 W ... moreCW, 50 V Wideband RF Power LDMOS Transistors. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
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Free Shipping Condition: New Location: Torrance, United States Part Number: NTE5812HC. Manufacturer: NTE. Trust NTE's Decades of Quality and Service. Axial lead. The product appearance may vary from what is pictured.
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$3.00 Shipping Condition: New Location: China ： MW7IC2725GNR1 MW7IC2725GN. Download ：RF LDMOS Wideband Integrated Power Amplifiers. The MW7IC2725N wideband integrated circuit is designed with on-chip ... morematching that makes it usable from 2300 - 2700 MHz.
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$4.11 Shipping Condition: New – Open box Location: Westland, United States This Toshiba module is a great addition to your electronic components collection. With 4 lots in 4 modules, this item is perfect for those in the business ... moreand industrial sector. The module features 4 pins and is ideal for use in a variety of devices. The MG200H1AL2 module is brand new and still in its original packaging. It is an open box item, which means that although the box has been opened, the module itself has never been used. This transistor is perfect for those who are in need of high-quality electronic components that are reliable and efficient. Purchase this Toshiba module today to enhance your electronic collection and take on new projects with ease.Sold as shown4parts in one lot012624G2
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$9.00 Shipping Condition: New Location: Oceanside, United States
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$3.00 Shipping Condition: New Location: China Maker：FREESCALE [Freescale Semiconductor, Inc]. RF Power LDMOS Transistors High Ruggedness. • Internally Input Matched for Ease of Use. RF Power Field ... moreEffect Transistors. • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts Avg.
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Free Shipping Condition: New Location: United States You may need to sign in.
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$4.50 Shipping Condition: New Location: Edinburg, United States Current - Continuous Drain (Id) @ 25°C110A (Tc). FET FeatureLogic Level Gate. Power - Max140W. NEW & ORIGINAL . Vgs(th) (Max) @ Id700mV @ 250µA.
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$2.60 Shipping Condition: New – Open box Location: Edinburg, United States Light Current-Nom 1.8 mA. Number of Functions 1. Shape ROUND. Power Dissipation-Max 0.1 W. Peak Wavelength (nm) 880.
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$3.10 Shipping Condition: New Location: Hialeah, United States DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated ... moreapplications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.,VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A
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Free Shipping Condition: New Location: Kissimmee, United States 18 Values, 10 Units Each Value. (180 Transistors in Total). High quality transistors. 1 x 180 SMD SOT-23 Transistors (18 Values x 10 Pieces Each). Micro ... moreSoldering, Heat Wave, or Reflow Installation.
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$5.15 Shipping Condition: New – Open box Location: Granbury, United States THIS IS FOR (50 PCS) OF 2N5486 BY SOLITRON DEVICES. Part #: 2N5486. Manufacturer: Solitron Devices, Inc. N-Channel RF Transistor JFET TO-92. Transistor ... moreApplication AMPLIFIER. Part Category: Transistors.
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$5.35 Shipping Condition: New Location: Villa Park, United States This allows for improved efficiency and reduced power loss in applications that require high current switching. The TIP35C is also designed for use in ... moreswitching power supplies and DC-DC converters. It has a high frequency capability and a low input capacitance, which allows for improved efficiency and reduced power loss.
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$4.60 Shipping Condition: New Location: Lewis, United States 100V 12A Audio. This test is easy for any engineer or technician. total 8 parts.
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$4.00 Shipping Condition: New Location: Roanoke, United States
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$5.15 Shipping Condition: New – Open box Location: Granbury, United States THIS IS FOR (1 PC) OF 2N3967A BY SOLITRON CROSS TO NTE133. Part #: 2N3967A. Part Category: Transistors. Power Dissipation-Max (Abs) 0.3 W. Polarity/Channel ... moreType N-CHANNEL. Peak Reflow Temperature (Cel) NOT SPECIFIED.
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Free Shipping Condition: New Location: United States Of Pins:2Pins;. We will do everything we can to make sure your happy with your order. We are happy to help! You may need to sign in. Sports & Outdoors.
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Free Shipping Condition: New – Open box Location: Stanton, United States (1 PC) NATIONAL 2N6719 Bipolar Junction Transistor NPN Type TO-237VAR NSN# 5961-01-150-0299. (NON-CORE DATA) SPECIFICATION/STANDARD DATA 80131-RELEASE6806 ... morePROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION.
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$5.00 Shipping Condition: New Location: Denison, United States This Fujitsu FLC103MB microwave device is a great addition to any electronic components and semiconductors collection. The device boasts a maximum operating ... morefrequency of 8 GHz, making it perfect for high-frequency applications. It is brand new and ready to be integrated into your projects. With the ability to withstand high temperatures and resistive loads, this transistor is ideal for use in the business and industrial sector. Its compact size and excellent performance make it perfect for use in a wide range of applications. Don't miss out on the chance to add this high-quality semiconductor to your collection today!
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Free Shipping Condition: New Location: Hickory Hills, United States 10pcs FQP50N06. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand ... morehigh energy pulse in the avalanche and commutation mode.
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Free Shipping Condition: New Location: Joliet, United States Bridgold 20pcs(10pcs TIP31C+10PCS TIP32C) NPN PNP Bipolar(BJT) Silicon Power Transistor,3A 100V TO-220AB. The Bipolar Power Transistor is designed for ... moreuse in general purpose amplifier and switching applications.
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$4.00 Shipping Condition: New Location: Roanoke, United States Twenty One Thermal Cut−offs (also known as Thermal Fuses) are now included in the NTE product line. NTE thermal cutoffs are UL and CSA listed. Such applications ... moreinclude Hot Plates. And hundreds of others.
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$5.40 Shipping Condition: New – Open box Location: Stanton, United States (50 PC) NSC 2N3906 Bipolar Junction Transistor PNP Type TO-92 NSN# 5961-01-305-8686. JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION ... moreTO-92. ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR.
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Free Shipping Condition: New Location: Albany, United States The FQP13N10 DMOS advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand ... morea high energy pulse in theavalanche and commutation modes.
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$2.88 Shipping Condition: New Location: China Description Manufacturer: Fairchild Manufacturer Part No: 2N4401 Package/ Case: TO-92 RoHS: Yes Datasheet: Click Here Specifications Current Rating: 0.6A ... moreVoltage Rated: 40V Transistor Type: NPN Features: General Purpose Amplifier. Package Included: 100 x 2N4401 Transistor NPN 40 Volts 600 mA HAM Kit Recommended Products $0.99 Time left:17d 0h 29m. $1.37 Time left:21h 12m. $2.14 Time left:17d 0h 29m. $3.28 Time left:27d 1h 22m. $4.98 Time left:21h 12m. $5.99 Time left:27d 23h 7m. $15.60 Time left:20h 43m. $18.88 Time left:2d 21h 58m. $2.57 Time left:9d 21h 29m. $1.80 Time left:21h 12m. $10.00 Time left:2d 21h 58m. $3.08 Time left:28d 23h 11m. $4.00 Time left:20h 43m. $1.42 Time left:9d 21h 28m. $10.97 Time left:27d 23h 7m. $7.98 Time left:20h 43m. $0.99 Time left:9d 21h 29m. $2.62 Time left:17d 0h 29m. $6.19 Time left:27d 1h 22m. $2.49 Time left:28d 23h 31m. $2.82 Time left:9d 20h 29m. $3.70 Time left:2d 21h 58m. $12.77 Time left:21h 12m. $20.96 Time left:9d 21h 28m. $33.30 Time left:20h 42m. $2.27 Time left:27d 23h 7m. $12.78 Time left:21h 12m. $2.36 Time left:28d 23h 12m. $1.00 Time left:9d 20h 29m. $19.44 Time left:27d 1h 22m. $7.24 Time left:21h 12m. $1.94 Time left:28d 23h 12m. $1.97 Time left:28d 23h 31m. $24.08 Time left:28d 18h 49m. $14.88 Time left:28d 18h 49m. $5.96 Time left:28d 18h 49m. $25.88 Time left:9d 21h 20m. $6.63 Time left:9d 21h 20m. $1.83 Time left:28d 23h 31m. $1.51 Time left:9d 21h 20m. $3.66 Time left:9d 21h 20m. $2.58 Time left:28d 18h 50m. $38.99 Time left:18d 1h 13m. $18.98 Time left:18d 1h 10m. $0.99 Time left:9d 21h 20m. $2.93 Time left:18d 1h 11m. $1.55 Time left:9d 20h 30m. $16.52 Time left:9d 20h 29m. Payment We accept PayPal only. But w e only Accept your Ebay Address.Please Make sure it's 100% right. Payment must be received in 5 business days of auction closing. Please leave note for your special request(e.g. Colors or Size) in PayPal when you pay the order. Any special request cannot be accepted after 24 hours of payment. Because most of orders will be processed instantly a
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Free Shipping Condition: New Location: Cookeville, United States Maximum Power Dissipation 625mW. The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching ... moreapplications. The order will be processed and completed by automatic warehouse system within 5 minutes.
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$6.80 Shipping Condition: New – Open box Location: Hungary
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$4.55 Shipping Condition: New – Open box Location: Huntington Station, United States SC150D SPECIFICATIONS. Trigger Device Type TRIAC. Data Sheet Sub Category TRIACs. Leakage Current-Max 0.1 mA. Holding Current-Max 50.0 mA.
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Free Shipping Condition: New – Open box Location: San Jose, United States The MMA-445933H-02 is a power amplifier with the State-of-the-Art linear power-added-efficiency between 4.4 GHz and 5.9 GHz frequency band. Based on advanced ... morerobust HFET device technology, the linearity of this power amplifier is 26 dBm linear power at 2.0% EVM and achieves an ACPR better than -38 dBc.
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Free Shipping Condition: New Location: Huntington Beach, United States Part: AD3956. Mfr:Analog Devices. Quantity:1 piece, (Individual Piece).
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$10.40 Shipping Condition: New Location: Ukraine Similar to the 2N220 AC160 2G381. Lot for 20 transistors. Noise Factor 5dB. Maximum temperature 85°C. Forward current transfer ratio (hFE) 20-60. Collector ... morecapacitance 50pF.
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$5.40 Shipping Condition: New – Open box Location: Stanton, United States (1 PC) ASI PMD16K100 Transistor Polarity BJT NPN 80V TO-3 NSN# 5961-01-114-8339. ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR. MOUNTING ... moreFACILITY QUANTITY 2. SEMICONDUCTOR MATERIAL SILICON.
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Free Shipping Condition: Used Location: China 1pc EL4004 module. 1pc for used GE IS200DSPXH1DBD. 1PCS NEW FOR WAGO 750-496 Analog PLC module 750496. We apply comprehensive quality check and testing ... morebefore dispatching. 401.34 USD. 381.27 USD. 186.71 USD.
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Free Shipping Condition: New Location: Chester, United States The checkout will present these options to you if they are available.
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