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$11.70 Shipping Condition: New Location: Rochester, United States Part #: DSC500100L. Current - Collector (Max): 100mA. Transistor Type: NPN. For sale is one reel of 416 pieces of Panasonic Small Signal Transistors, ... morepart #DSC500100L. Small Signal Transistors. RoHS: Compliant.
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Free Shipping Condition: New Location: Torrance, United States Part Number: NTE5419. Manufacturer: NTE. Trust NTE's Decades of Quality and Service.
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Free Shipping Condition: New Location: Torrance, United States Part Number: NTE159. Manufacturer: NTE. Trust NTE's Decades of Quality and Service. TRANSISTOR PNP SILICON 80V IC-1A TO92 LOW NOISE AUDIO AMP SWITCH COMPARABLE ... moreTO NTE123AP.
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Free Shipping Condition: New Location: Torrance, United States Part Number: NTE280MP. MATCH PAIR OF NTE280 TRANSISTOR NPN SILICON 140V IC=12A TO-3 CASE AUIO POWER OUTPUT. Manufacturer: NTE. Trust NTE's Decades of ... moreQuality and Service.
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Free Shipping Condition: New Location: Torrance, United States Part Number: TIP42A. Manufacturer: NTE. TRANSISTOR PNP SILICON BVCEO=60V IC=6A TO-220 CASEFOR GENERAL PURPOSE POWER AMPLIFIER AND SWITCH. Trust NTE's ... moreDecades of Quality and Service. The product appearance may vary from what is pictured.
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$5.35 Shipping Condition: New Location: Villa Park, United States The Darlington pairs can be paralleled for higher current capability. • 500-mA-Rated Collector Current (Single Output).
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$2.00 Shipping Condition: New Location: China No any handle fees.
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Free Shipping Condition: New Location: Potomac, United States This is one Lot (Qty. Frequency Range: DC to 5000MHz. IP3: +24.3dBm at 850MHz; +23.8dBm at 1950MHHz. ).
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$3.00 Shipping Condition: New Location: China : MRF5S4125NR1 MRF5S4125N. Download : RF Power Field Effect Transistors. 9.8 dB @ 0.01% Probability on CCDF. ACPR @ 750 kHz Offset ó -47.6 dBc in 30 kHz ... moreBandwidth. • Internally Matched for Ease of Use.
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Free Shipping Condition: New Location: Los Angeles, United States Series: BC517. Transistor Polarity: NPN. Unit Weight: 0.007055 oz. Length: 5.2 mm. Height: 5.33 mm. DC Collector/Base Gain hfe Min: 30000. Continuous ... moreCollector Current: 1 A.
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Free Shipping Condition: New Location: Waycross, United States Looking for a high-quality silicon controlled rectifier? Look no further than the NTE5568 from NTE Electronics. This top-of-the-line device is perfect ... morefor any business or industrial application that requires a reliable and high-performance rectifier.With a maximum DC collector current of 100 mA and a package/case of TO-65, this rectifier is sure to meet all of your needs. Its 600VRM rating ensures that it can handle even the toughest applications with ease. Don't settle for anything less than the best - choose the NTE5568 from NTE Electronics today!
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$5.35 Shipping Condition: New Location: Villa Park, United States The TIP42C is a base island technology PNP. PNP type is TIP42C. Polarity: PNP. Material of Transistor: Si. Maximum Collector Power Dissipation (Pc): 65 ... moreW. ■ Power linear and switching. make this device suitable for audio, power linear.
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$28.00 Shipping Condition: New Location: Niagara Falls, United States We are specialized in hard-to-find components.
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$5.40 Shipping Condition: New Location: Fort Wayne, United States This 2SC2458-GR transistor is a rare find, perfect for electronics enthusiasts and professionals alike. With a mounting style of through-hole and 3 pins, ... moreit is compatible with a wide range of devices.
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$3.00 Shipping Condition: New Location: 福田区, China Maker ：NXP (fresscale). RF POWER LDMOS TRANSISTOR. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency ... moredevice is targeted to replace industrial magnetrons and will provide longer life and ease of use.
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$5.35 Shipping Condition: New Location: Villa Park, United States Type of Transistor: MOSFET. device design that HEXFET Power MOSFETs are well. applications where higher power levels preclude the use of. Maximum Power ... moreDissipation (Pd): 300 W. - Advanced Process Technology.
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Free Shipping Condition: New Location: China BC557 PNP 35PCS BC558 PNP 35PCS. 2N2222 NPN 35PCS. 2N3904 NPN 35PCS. 2N5551 NPN 35PCS. C1815 NPN 35PCS. C945 NPN 35PCS. S8050 NPN 35PCS. S9014 NPN 35PCS.
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$4.26 Shipping Condition: New Location: Huntington Beach, United States Silicon Transistor NPN bipolar 25V, 0.2A, 0.2/0.75W TO-18. Quantity:100 pieces = (1 lot of 100 pieces). DO NOT SUBSTITUTE WITH OVERSEAS SUBSTANDARD REMAKES.
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$2.79 Shipping Condition: New Location: Edinburg, United States Transistor TypeNPN. Current - Collector (Ic) (Max)200mA. Current - Collector Cutoff (Max)-. DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V. NEW & ... moreORIGINAL 25 Pieces. Power - Max150mW.
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Free Shipping Condition: New Location: Huntington Beach, United States Manufacturer CDIL. Transistor; NPN; Bipolar; 25V; 200mA; 0.2/0.75W; TO-18; 4dB. Type of transistor NPN. Polarisation bipolar. Collector current 200mA. ... moreQuantity:12 pieces = (1 lot of 12 pieces). Power dissipation 0.2/0.75W.
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$3.00 Shipping Condition: New Location: China Download ：15W, 512MHz ,12.5v. • Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive. Maker : MOTOROLA. Output Power — 15 Watts. Power Gain ... more— 10 dB Min. We will reply you ASAP.
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$3.00 Shipping Condition: New Location: China Download ：120W, 1000MHz, 28V. RF Power Field Effect Transistors. Maker : MOTOROLA. We will reply you ASAP.
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$5.40 Shipping Condition: New Location: Sterling Heights, United States Linear Technology. ORIGINAL OEM. Mounting TypeSurface Mount. Synchronous RectifierNo. Frequency - Switching500kHz. Current - Output3A (Switch).
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Free Shipping Condition: New Location: Potomac, United States Device Marking: L. RoHS Compliant. Continuous Collector Current Ic: 150mA. hfe: 200 to 400. ft = 100MHz.
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$5.40 Shipping Condition: New Location: Stanton, United States SEMICONDUCTOR MATERIAL SILICON. ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR. LOT 30995 F27.
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$6.80 Shipping Condition: New – Open box Location: Hungary
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Free Shipping Condition: New – Open box Location: Stanton, United States (1 PC) RCA JAN2N3441 Bipolar Junction Transistor NPN Type TO-66 NSN# 5961-00-054-4141. JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE ... moreDESIGNATION TO-66. ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR.
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$5.15 Shipping Condition: New – Open box Location: Granbury, United States THIS IS FOR (1 PC) OF 2N4222A BY SOLITRON. Part #: 2N4222A. Manufacturer: Solitron Devices, Inc. Part Category: Transistors. Polarity/Channel Type N-CHANNEL. ... morePeak Reflow Temperature (Cel) NOT SPECIFIED.
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$12.89 Shipping Condition: New – Open box Location: München, Germany MJD32C PNP POWER TRANSISTOR. 20 pieces MJD32C PNP POWER TRANSISTOR. 3A | Vceo 100V | Vcbo 100V | Ptot 15W | DPAK (TO-252). 3A | Vceo 100V | Vcbo 100V ... more| Ptot 15W | DPAK (TO-252) The device is manufactured in planar technology with “base island” layout.
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$2.99 Shipping Condition: New – Open box Location: Edinburg, United States FET Type2 N-Channel (Dual). Power - Max2W. FET FeatureStandard. Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V. Vgs(th) (Max) @ Id1V @ 250µA.
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$10.40 Shipping Condition: New Location: Ukraine Maximum collector current 20mA. Forward current transfer ratio (hFE) 20-40. Lot for 30 transistors.
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$5.40 Shipping Condition: New – Open box Location: Boca Raton, United States
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Free Shipping Condition: New Location: Torrance, United States Part Number: NTE6200. RECTIFIER DUAL 200V 30AMP TO-3 POSITIVE CENTER TAPCATHODE CASE. Manufacturer: NTE. Trust NTE's Decades of Quality and Service. The ... moreproduct appearance may vary from what is pictured.
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$9.45 Shipping Condition: New Location: Liberty, United States H.T.# O,A-2 DRAW 6 B-22 ITEM # 48.869764.
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$4.00 Shipping Condition: New Location: Westerly, United States Normal 0 false false false EN-US X-NONE X-NONE MicrosoftInternetExplorer4 Normal 0 false false false EN-US X-NONE X-NONE MicrosoftInternetExplorer4 Normal ... more0 false false false EN-US X-NONE X-NONE MicrosoftInternetExplorer4 NTE78: NPN RF Power Transistor 3-4 Watt Output: Ideal for QRP Great Price for RF Device Ideal for QRP transmitters The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power amplifiers in HF band radio applications. Case: TO-202 Max power out is about 3-4-Watts. Note: Total Power Dissipation is 5-Watts. Output power realized is about 3-Watts. With the proper heatsink. You could drive this transistor to 4-Watts. It is important to use a heatsink if driving it over its specified limits(Not Included but sold in our Ebay store) Without the use of a heatsink. You will probably overheat the transistor and destroy it. Each device comes individually bagged with specs and pin layout printed on the bag. Detailed specs can be found at the NTE Website. NTE semiconductor has been a leader in the semiconductor industry for almost 30 years. They provide a wide array of replacement semiconductors, industry standard semiconductors. Capacitors, relays, resistors, and much more. We are proud to be part of the limited network of distributors. If you’re into QRP. Then a few of these belong in your“junk box” Economically priced considering how RF transistors have skyrocketed in the past few years. I always combine items to save you on shipping costs. Be sure to request an invoice BEFORE PAYING when buying multiple items. Check out our Ebay store. A Note to International Customers: First I want to say that when we receive an order. It is shipped promptly within 1-3 days. Once the order is brought to the post office and shipped, it is out of our hands. Delivery outside of the United States can take anywhere from 1 week all the way up until 12 weeks(Typical though is one to four weeks) There are numerous reasons for the delay. Typically. Packages are delayed in customs, f
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$4.00 Shipping Condition: New Location: Roanoke, United States The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed ... moreto switch at 8 volts with a 0.02%/°C temperature coefficient and excellently matched characteristics in both directions.
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$2.93 Shipping Condition: New Location: Hialeah, United States Welcome to ICMarket2009 Item Description Parts NO. 78M08 Package: TO-252 Quantity: 50 PCS a lot LINEAR INTEGRATED CIRCUITS 3-TERMINAL VOLATGE REGULATORS ... moreFor more quantity. Please contact us: ICmarket2009 Payment Information· We accept Paypal payment only. Shipping cost cannot be combined. Free shipping is without a tracking number. For insurance service(Having a tracking number) Please add $2.5 at the payment. Shipping Information· Items will be ship within 2 days of payment receive. Items ship from Hongkong and it takes 10-20 working days(2-4 weeks) to receive for most area. If you do not receive item over 30 working days(6 weeks) Please contact me to investigate the case. Return Policy· Any problem or unhappy with items. You will get refund in full amount. No question ask. Contact Us· If you have any question. Please contact me via ebay contact seller. wish you a happy shopping. Welcome to the next visit Powered by The free listing tool. List your items fast and easy and manage your active items. Powered by The free listing tool. List your items fast and easy and manage your active items.
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$5.15 Shipping Condition: New – Open box Location: Granbury, United States THIS IS FOR (1 PC) OF 2N4416 BY SOLITRON. Part #: 2N4416. Manufacturer: Solitron Devices, Inc. JFET N-Channel 35 V 300 mW TO-72. Part Category: Transistors. ... moreQualification Status Not Qualified. Power Gain-Min (Gp) 10.0 dB.
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$3.00 Shipping Condition: New Location: China Maker：EUDYNA [Eudyna Devices Inc]. High Output Power: P1dB = 34.0dBm(Typ.). High Gain: G1dB = 8.0dB(Typ.). High PAE: ηadd = 35%(Typ.).
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$4.60 Shipping Condition: New Location: Lewis, United States FGA50N100BNT IGBT Power transistor 1000V 50A 156W Case: TO3P Lot Size: 1 units See other listings and lot sizes for this item See other IGBTs IGBT N channel ... moreFairchild 1000VDS. 50A, 200A pulsed, 156Watt, 1.5Vsat Trench insulated gate bipolar transistors(IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating( I-H) applications Features High Speed Switching Low Saturation Voltage: VCE(sat) = 1.5V@ IC = 10A High Input Impedance Datasheet I only ship to buyer's EBAY shipping address IMPORTANT: Auction listings cannot be extended in quantity. For different quantities you can click the link"see other listings for this item" above. Or search for the part number in our store. Payment is required within 3 days. Can only combine purchases for 3 days. Buyer controls combining of order. By making a single payment for all items. Multiple payments void any shipping discounts. If you have ANY time constraints. Contact seller BEFORE buying or bidding, so we can BOTH come to an agreement. INTERNATIONAL shipments will NOT have online tracking. Unless you use REGISTERED MAIL( starts at $19) contact seller for instructions. INTERNATIONAL transit time can be 6-28 business days. And can be delayed by local Customs backlogs. If this is not acceptable, you may not enter into this trade. US shipments can take 5-7 business days- however the USPS does NOT guarantee these transit times. And can exceed them. eBay tracking info has 24-48 hrs update latency and can only guarantee a delivery scan- interim scans may not occur. ALL items shipped to buyer's Registered eBay shipping address address. Without exception. We can never take an address from email. Payment closes order. No changes are possible once paid. We have no expedited shipping service outside USA- If urgent. Please source locally. International: If you want seller to be responsible for package in transit. You must choose
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$28.00 Shipping Condition: New Location: Niagara Falls, United States 1PCS BSM25GD120DN2 INFINEON IGBT MODULE NEW AND ORIGINAL. We are specialized in hard-to-find components.
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$5.35 Shipping Condition: New Location: Villa Park, United States 5pcs IRFZ24N 17A 55V Fast Switching Power MOSFET Transistor HEXFET. and ruggedized device design that HEXFET Power. VDSS = 55V. - Fast Switching. This ... morebenefit, combined with the fast switching speed. - Ease of Paralleling.
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$7.00 Shipping Condition: New Location: Hollywood, United States Lot of 100 pcs MP13B (МП13Б) PNP Germanium Transistors, New. MP13, MP13B, MP14, MP14A, MP14B, MP15, MP15A, MP16, MP16A, MP16B, MP16YaI, MP16YaII, MP21, ... moreMP21A, MP21B, MP21V, MP21G, MP21D, MP21E, MP25, MP25A, MP25B, MP26, MP26A, MP26B, P27, P27A, P27B, P28, P29, P29A, P30, MP39, MP39B, MP40, MP40A, MP41, MP41A, MP42, MP42A, MP42B, P401, P402, P403, P416, P416A, P416B, P417, P423, GT308A, GT308B, GT308V, GT309E, GT310B, GT313A, GT320A, GT320B, GT320V, GT321V.
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Free Shipping Condition: New Location: Torrance, United States Part Number: 2N4124. Manufacturer: NTE Electronics. Transistor NPN Silicon 25V IC=0.2A TO-92 Case General Purpose Amplifier And Switch. Trust NTE's Decades ... moreof Quality and Service.
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Free Shipping Condition: New Location: Casper, United States The FQP13N10 DMOS advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand ... morea high energy pulse in theavalanche and commutation modes.
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$10.40 Shipping Condition: New Location: Ukraine Equivalent to the 2SA490, 2SA671, BD176, BD234, BD438. Silicon P-N-P transistors KT816B. Forward current transfer ratio(hFE) >25. Lot for 30 transistors. ... moreDissipated power collector with heat 25W. Dissipated power collector 1W.
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$7.00 Shipping Condition: New Location: Hollywood, United States Lot of 100 pcs MP38A (МП38А) NPN Germanium Transistors, New. MP9A, MP10, MP10A, MP10B, MP11, MP11A, MP35, MP36A, MP37, MP37A, MP37B, MP38, MP38A. This ... morewarmth is due to their non-linear behavior, which can introduce harmonic distortion and coloration to audio signals.
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$4.50 Shipping Condition: New Location: Edinburg, United States Current - Continuous Drain (Id) @ 25°C110A (Tc). FET FeatureLogic Level Gate. Power - Max140W. NEW & ORIGINAL . Vgs(th) (Max) @ Id700mV @ 250µA.
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$4.02 Shipping Condition: New Location: Oxford, United States 2N4403 General Purpose Transistors. QTY of 20 transistors. 1 Item=20 Transistors.
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Free Shipping Condition: New Location: Chula Vista, United States The third picture suggests a garden vareity 2N series, but JANTX precedes the text. General Dynamics N-Ch. Mil-Spec FET Transistor TO-5 JANTX Qual. 2N4856 ... more261223-1. DBA GENERAL DYNAMICS OTS SEATTLE DIV SEATTLE OPERATIONS.
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Free Shipping Condition: New Location: Niagara Falls, United States We are specialized in hard-to-find components.
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$4.65 Shipping Condition: New – Open box Location: Windber, United States This Buy It Now is for 100 transistors. collector current 600mA. SMD (Surface-Mounted Device). D/C: 9910 QTY: 2765 Manufacturer data sheet is available ... morehere:Data Sheet. Local pickup is also available.
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$6.00 Shipping Condition: New Location: Stanton, United States SEMICONDUCTOR MATERIAL SILICON. (NON-CORE DATA) SPECIFICATION/STANDARD DATA 80131-RELEASE4716 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION. LOT 32089 ... moreF27.
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Free Shipping Condition: New – Open box Location: Grand Rapids, United States
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Free Shipping Condition: New – Open box Location: Virginia Beach, United States RFM RX2010 916.5 MHz ASH Receiver RF Monolithics. Two surface-accoustic-wave (SAW) devices are employed. Front-end filtering by a low-loss coupled-resonator ... moreSAW filter provides excellent selectivity.
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$6.90 Shipping Condition: New Location: North Andover, United States RCA 2N4396 semiconductor device Old stock
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$10.40 Shipping Condition: New Location: Ukraine Similar to the 2N987, 2SA104, 2SA221, 2SA256. Germanium PNP transistors GT322B. Limiting DC collector transistor 10 mA. Made in USSR. Collector junction ... morecapacitance 2.85pF. Power dissipation Collector 0.05 W.
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$5.45 Shipping Condition: New Location: Addison, United States Current - Continuous Drain (Id) @ 25° C 23A. Power - Max 280W. FET Feature Standard. Input Capacitance (Ciss) @ Vds 4500pF @ 25V.
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$5.35 Shipping Condition: New Location: Villa Park, United States Type of Transistor: MOSFET. device design that HEXFET Power MOSFETs are well. applications where higher power levels preclude the use of. Maximum Power ... moreDissipation (Pd): 300 W. - Advanced Process Technology.
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$4.60 Shipping Condition: New Location: Lewis, United States 100V 12A Audio. 4 each of NPN and PNP device. Best Genuine USA parts from USA distribution.
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