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$3.00 Shipping Condition: New Location: China MITSUBISHI RF POWER MODULE. Download : SILICON MOS FET POWER AMPLIFIER. Maker : MITSUBISHI. We will reply you ASAP.
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$10.00 Shipping Condition: New Location: Romania The ASI 2N3375 is Designed for. Class A,B,C Amplifier,Oscillator and. θJC 15 OC/W. TSTG -65OC to +200 OC. TJ -65OC to +200 OC.
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Free Shipping Condition: New Location: Monroe Township, United States F = 0.1 MHz gain = 32dB. F = 500 Mhz gain = 32dB. F = 1000 MHz gain = 32dB. F = 1500 Mhz gain = 32dB. F = 2000 MHz gain = 32dB. Gain amplifier -This product ... morecan be applied to several rf receive frontal and increase the communication distance.
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Free Shipping Condition: New Location: Jamaica, United States F = 0.1 MHz gain = 32dB. F = 500 Mhz gain = 32dB. F = 1000 MHz gain = 32dB. F = 1500 Mhz gain = 32dB. F = 2000 MHz gain = 32dB. Gain amplifier -This product ... morecan be applied to several rf receive frontal and increase the communication distance.
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Free Shipping Condition: New Location: Santa Clara, United States
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$3.00 Shipping Condition: New Location: China : AFIC10275N AFIC10275NR1. These devices are suitable for use in pulse applications, including Mode S transponders used for ADS--B. AIRFAST RF LDMOS WIDEBAND. ... moreINTEGRATED POWER AMPLIFIERS. Integrated ESD Protection.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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$3.00 Shipping Condition: New Location: 福田区, China Manufacturer : AE Pinnacle (ADVANCED ENERGY). AE RF Power MODULE APEX. Professional one station high-frequency tube,RF. Microwave Amplifier. MGF:900209 ... moreDriver exciter 2303256-B.
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$3.00 Shipping Condition: New Location: China Manufacturer ： Avago. Download ：Multiband Multimode PA Quad-Band GSM/EDGE and MultiMode. We will reply you ASAP.
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$3.29 Shipping Condition: New Location: Edinburg, United States RF/Microwave Device Type NARROW BAND LOW POWER. Characteristic Impedance 50.0 ohm. Mounting Feature SURFACE MOUNT. NEW & ORIGINAL 2 Pieces.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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$3.00 Shipping Condition: New Location: China SBB5089+SZA2044 One-Way Microwave Power Amplifier RF Power Amplifier Module 40DB WYDZ-PA-1G-3GHz-1W. 1x Aluminum Alloy RF Power Amplifier. Module frequency ... morerange: 1G-3GHz (wideband power amplifier). 2.4G video transmission, interference unit power amplifier.
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$3.00 Shipping Condition: New Location: China MITSUBISHI RF POWER MODULE. 450-512MHz 12.5V,7W,FM PORTABLE RADIO. Download : SILICON MOS FET POWER AMPLIFIER. Maker : MITSUBISHI. We will reply you ASAP.
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$3.00 Shipping Condition: New Location: China US 8705167 8705167 A AE RF Power MODULE APEX. Professional one station high-frequency tube,RF. Microwave Amplifier. We will reply you ASAP.
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$3.00 Shipping Condition: New Location: 福田区, China Professional one station high-frequency tube,RF. Microwave Amplifier. Maker : [Advanced Power Technology]. We will reply you ASAP.
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$4.00 Shipping Condition: New – Open box Location: China
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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Free Shipping Condition: New Location: Jamaica, United States F = 0.1 MHz gain = 32dB. F = 500 Mhz gain = 32dB. F = 1000 MHz gain = 32dB. F = 1500 Mhz gain = 32dB. F = 2000 MHz gain = 32dB. -This product can be applied ... moreto several rf receive frontal and increase the communication distance.
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$26.25 Shipping Condition: Used Location: Logan, United States PRO 2500 PowerCenter™ for Musicians and Sound Professionals Who Want AC Line Protection and Enhanced Performance As fellow musicians, we designed the ... morePRO 2500 PowerCenter to help achieve the best possible sound at an affordable price.
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$3.00 Shipping Condition: New Location: China MITSUBISHI RF POWER MODULE. 380-400MHz, 6V, 2W, FM PORTABLE RADIO. Download : SILICON MOS FET POWER AMPLIFIER. Maker : MITSUBISHI. We will reply you ASAP.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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Free Shipping Condition: New Location: Gaithersburg, United States This Designer Kit is for RF MMIC Amplifier with 2-stage SOT-89 package for higher output power with heatsink. Size of the PCB 1"x1"x0.031" ... moreFR-4 material, double-sided with solid plated ground plane on the back. The layout also includes input/output DC coupling capacitor 0603 size, RF choke and drop resistor, de-coupling capacitors and voltage regulators(78M08 for 8V or 78M05 for 5V in DPAK package) Kit include: Machined Housing and Cover with Heatsink. 1 ea 2-Stage AMP89X2 PCB. 1 ea SMA 2-Hole Flange Jack Receptacle Connector. 2 ea MC78M08BDTRK(8V regulator. 40C to +85C) 1 ea EMI 5000pF Feedthrough Cap 8-32. 1 ea Ground Solder Terminal with Washer. 1 ea 4-40X3/16 Hex Head Screw(for Heatsink) 4 ea 2-56X3/16 Hex Head Screw(for SMA Connector) 4 ea 2-56X3/16 Pan Head Screw(for mount PCB) 6 ea 2-56X3/16 Flat Head Screw(for Cover) 4 ea SOT-89 package MMIC amplifier includes but not limited to Sirenza SGA. SBA, SBF, SXA, SXT, SXB, SHF series, Anadigics AGB series, Mini-circuits Gail series, RF Micro Devices RF337X, RF3315, RF3817,RF3819 series, Hittite Microwave ST89 package, Watkins Johnson EC, ECG series SOT-89 package, Agilent ATF-50189, ATF-52189, ATF-53189, etc. The schematic for the components and assembly drawing is attached in following pdf file.
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$10.17 Shipping Condition: New Location: Canada
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Free Shipping Condition: New Location: Israel RF POWER AMPLIFIER. Quantity: 76 pcs. We didn't count the parts, we trusted the quantity written on the label by the OEM who sold us the parts, no complains ... moreon quantity difference will be accepted, parts sold AS-IS.
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$3.00 Shipping Condition: New Location: China Maker : Freescale. 4W 1-2000MHz 28V. Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and ... moredigital modulation and multicarrier amplifier applications.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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$3.80 Shipping Condition: New Location: Victorville, United States (Type LM733). ( Type LM733 ). It has wide bandwidth, low phase distortion, and excellent gain stability. No external frequency compensation components ... moreare required for any gain option. Applications include general purpose video and pulse amplifiers where wide bandwidth, low phase shift, and excellent gain stability are required.
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$3.00 Shipping Condition: New Location: 福田区, China AE 1330004 AE 1330004E AE RF Power MODULE AESZ. Professional one station high-frequency tube,RF. Microwave Amplifier. We will reply you ASAP.
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$3.19 Shipping Condition: Neu Location: China 1 x LNA 50-4000MHz SPF5189 RF Amplifier. Platinen & Entwicklungskits. This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. LNA: 50-4000mhz. In the ... morecase of amplifying weak signal, the noise of the amplifier itself may be very serious, so it is hoped that this noise will be reduced to improve the signal-to-noise ratio of the output.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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$3.99 Shipping Condition: Seller refurbished Location: China Quantity: 1Pc. - 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW. Output Power — 120 Watts PEP. ... morePower Gain — 11 dB. Reminder: Be sure to use your product as directed;.
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$3.00 Shipping Condition: New Location: China First Automation.
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$4.00 Shipping Condition: New – Open box Location: China
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Free Shipping Condition: New Location: San Jose, United States Expected MTBF at 85°C case temperature is 120,000 years at 2.8V; 60,000 years at 5V. • High directivity, 17 dB typ. • Output power, up to +11.4 dBm typ. ... moreThey have repeatable performance from lot to lot.
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$6.40 Shipping Condition: New Location: Raleigh, United States The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with an advanced GaAs HBT process. The RF5110G RF ... moreInput is internally matched to 50 Ω. On its RF Output, it can be easily matched externally to obtain optimum power and efficiency for certain applications.
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$3.00 Shipping Condition: New Location: China 20Pcs Power Amplifier 2SC2078 -TO-220 27Mhz Rf New Ic. However, we will try our best to minimize it.
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$3.00 Shipping Condition: New Location: China The MRF150 is an N-Channel. Maker ： ASI. Download : SILICON RF POWER MOSFET. Applications From 2.0 to 150 MHz. RF Ppwer Transistor Designed for. Wideband ... moreLarge Signal Amplifier.
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$3.00 Shipping Condition: New Location: 福田区, China APEXAE AE 8705165 AE 8705165 AE RF Power MODULE. Professional one station high-frequency tube,RF. Microwave Amplifier. We will reply you ASAP.
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Free Shipping Condition: Neu Location: China 1 x RF Power Amplifier. With DCDC module inside. Am 02.12.2022 hat der Verkäufer die folgenden Angaben hinzugefügt Operation Videos Usually it cost about ... more35USD-50USD.
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$5.46 Shipping Condition: Seller refurbished Location: China (Excluded.).
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Free Shipping Condition: New Location: Gaithersburg, United States Output Power P1 (typ): 15W. Data Sheet on Web at Surface Mount.
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$3.00 Shipping Condition: New Location: China (1 x Low Noise Amplifier Module. Input signal: ≤0 DBM（＞0 DBM Input, the output signal has been distorted.). Input Output Impedance: 50 Ohm. We will try ... moreour best to avoid any quality problem. Due to the difference between different monitors, the picture may not reflect the actual color of the item.
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Free Shipping Condition: New Location: Jamaica, United States F = 0.1 MHz gain = 32dB. F = 500 Mhz gain = 32dB. F = 1000 MHz gain = 32dB. F = 1500 Mhz gain = 32dB. F = 2000 MHz gain = 32dB. Gain amplifier -This product ... morecan be applied to several rf receive frontal and increase the communication distance.
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Free Shipping Condition: New Location: South Bend, United States 1 Transistor - Mitsubishi RD30HVF1 Silicon MOSFET Power Transistor Amplifier, 175MHz, 30W. -Gp>14.7dB@Vdd=12.5V, f=175MHz. Designed for VHF RF power amplifiers ... moreapplications.
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$3.74 Shipping Condition: Neu Location: China F = 0.1 MHz gain = 32dB. F = 500 Mhz gain = 32dB. F = 1000 MHz gain = 32dB. F = 1500 Mhz gain = 32dB. F = 2000 MHz gain = 32dB. Gain amplifier -This product ... morecan be applied to several rf receive frontal and increase the communication distance.
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$3.00 Shipping Condition: New Location: China : MRF1550NT1 M1550 S1550. Maker ： FREESCALE. RF Power Field Effect Transistors N-Channel. • In Tape and Reel. Power Gain ó 12 dB. Output Power ó 50 Watts. ... moreWe will reply you ASAP. Efficiency ó 50%.
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Free Shipping Condition: New Location: United States The AD831 is a low distortion, wide dynamic range, single chip mixer, suitable for HF and VHF Receiver RF-IF frequency, second mixer in base station, ... moreDC-baseband conversion, quadrature modulation and demodulation, and imaging, frequency shift detection and other applications.
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$2.78 Shipping Condition: Neu Location: China The low noise amplifier module has a higher gain and provides very low noise over a wide frequency range. This provides communication between the receiver ... moreand the transmitter. It is suitable for fixed gain amplification of various RF signals.
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$2.20 Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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$4.00 Shipping Condition: New Location: China Input and output impedance: 50ohms. - Connector: SMA female to female connector. - 1 x Power Amplifier Module. Don't reverse connect it. - Large signal ... moreinput power consumption: 10.5W. - Small signal input power consumption: 1.59W.
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$694.20 Shipping Condition: Gebraucht Location: Coswig, Germany HF Endstufe 22kw. Trumpf Laser Huttinger Elektronik. RF Power Outlet Amplifier. Sie haben auf die gekaufte Ware ein Rückgaberecht von 1 Monat.
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$3.00 Shipping Condition: New Location: China Maximum output power: 34.8dbm(3W). - This RF Power Amplifier 's typical power Gain is 35 dB. 1/2/5 x RF Power Amplifier. - Maximum input power: 300M Gain ... moreslightly decreased).
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$2.78 Shipping Condition: Neu Location: China Output attenuation: 6dB. 1x Rf Microwave Resistor Power Distributor Module. Power Frequency: DC-5G. Step up module. Adapter Module. Step down module. ... moreDisplay module. Wireless module.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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Free Shipping Condition: New Location: Monroe Township, United States F = 0.1 MHz gain = 32dB. F = 500 Mhz gain = 32dB. F = 1000 MHz gain = 32dB. F = 1500 Mhz gain = 32dB. F = 2000 MHz gain = 32dB. Gain amplifier -This product ... morecan be applied to several rf receive frontal and increase the communication distance.
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Free Shipping Condition: New Location: Jamaica, United States F = 0.1 MHz gain = 32dB. F = 500 Mhz gain = 32dB. F = 1000 MHz gain = 32dB. F = 1500 Mhz gain = 32dB. F = 2000 MHz gain = 32dB. Gain amplifier -This product ... morecan be applied to several rf receive frontal and increase the communication distance.
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$3.00 Shipping Condition: New – Open box Location: China : MRF1550FNT1 M1550FN. RF Power Field Effect Transistors N-Channel. Output Power: 50 Watts. The bottom is equipped with heat sink for better operation. ... moreSpecial products are scarce. Power Gain: 14.5 dB.
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$2.98 Shipping Condition: New – Open box Location: China 10pcs New 2SC2078-E 2SC2078E C2078 27MHz RF Power Amp Applications TO-220.
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