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Location: China
Range, low noise, PHEMT housed in a 4-lead SC-70 (SOT343). low noise fi gure with good intercept in the 450 MHz to. SOT-343 (4 lead SC-70). Avago Technologies’s ... moreATF-38143 is a high dynamic. We will reply you ASAP.
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Location: Gaithersburg, United States
This is one Lot(Qty. 2) of Develop PCB for 2-Stage Agilent 0.5- 6GHz Low Noise MMIC GaAs Amplifier. 5V 20dB High Gain, Part Nubmer: MGA-86563 in SOT-363(SC-70) ... morePackage with SAW Filter in between 2 MMIC amplifier. Size of the PCB 1"x1"x0.031" FR-4 material, double-sided with solid plated ground plane on the back. Will fit SMA/SMB or MCX RF connector with 0.031" board space. Please check link attached below for schematic and assembly drawing. The idea for this PCB is to provide high gain and selected narrow band of interest by using SAW filter in between two MMIC amplifier. Since the gain is very high by using 2 cascade MGA-86563. Without SAW, it could result an oscillation. the footprint for SAW filter is normal 3.00x3.00mm(2.00x2.00mm or 3.50x3.50mm can be used by manual solder with carefully workmanship) Gerenal Specifications for MGA-86563: Frequency Ragne: 500MHz- 6.0GHz Noise Figure: 1.6dB at 2.4GHz Gain: 21.8dB at 2.4GHz P1 dB: +3.1dBm at 2.4GHz IP3: +15dBm at 2.4GHz Supply: 6V/14mA Package: SOT-363 Data Sheet for MGA-86563 on Web as follows: Reference Schematic for this Develop PCB: Assembly Drawing for this Develop PCB: You can buy 10pcs MGA-86563. Link attached below:
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Location: San Jose, United States
Frequency: 1575MHz ~ 1610MHz. Category: RF/IF and RFID, RF Amplifiers. Mounting Type: Surface Mount.
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Location: San Jose, United States
This is a lot of 10 NXP Semiconductors Modulator / Demodulator FM SND IF PLL Video Demodulator TDA9881TS. IF signal PLL demodulator for negative modulation, ... moreincluding Quasi Split Sound (QSS) or intercarrier FM processing.
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Condition: New – Open box
Location: Bulgaria
PNP Transistors. HFE= 30.60. • The structure of the transistor: pnp. • h21e - Static current transfer ratio of the transistor small signal for the common-emitter ... moreand common-base, respectively, 30. 60.
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Location: 福田区, China
: NE32484A. The NE32484A is a Hetero Junction FET that utilizes the. FEATURES : C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. low noise and ... morehigh associated gain make it suitable for DBS. Channel Temperature Tch 150 ˚ C.
$
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Condition: New
Location: Romania
BUS14A -BUS14 SILICON NPN POWER TRANSISTOR TO3. Type Designator: BUS14. Polarity: NPN. Material of transistor: Si. LOT of 2 Pcs. Maximum collector power ... moredissipation (Pc), W: 250. Maximum collector current |Ic max|, A: 30.
$
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Condition: Neu
Location: China
The low noise amplifier module has a higher gain and provides very low noise over a wide frequency range. This provides communication between the receiver ... moreand the transmitter. It is suitable for fixed gain amplification of various RF signals.
$
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Location: 福田区, China
Maker: Mitsubishi. L to K band low noise amplifiers. High associated gain @ f=12GHz. QUALITY GRADE.
$
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Condition: New
Location: China
Maker : AVAGO. wideband applications. • Amplifier for cellular, cordless. response from DC to 3.5 GHz. 50-ohm matched silicon. Agilent’s HP25 silicon ... morebipolar. breakdown (25 GHz fT at 6V. single polysilicon. ).
$
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Location: Los Angeles, United States
Polarity: NPN. Material of Transistor: Si. Forward Current Transfer Ratio (hFE), MIN: 20. Collector Capacitance (Cc): 4 pF.
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Condition: New
Location: Taiwan
Type Designator: 2SC2878. Polarity: NPN. Material of Transistor: Si. OFFICE 5F 5E5L 1-4 BOX8-2 CONFIRM. Forward Current Transfer Ratio (hFE), MIN: 200. ... moreCollector Capacitance (Cc): 4.8 pF.
$
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Condition: New
Location: Taiwan
2SD288 / D288 NPN 20W 30V 2A Transistor- NOS. Type Designator: 2SD288. Polarity: NPN. Material of Transistor: Si. OFFICE 5F 5E5L 1-4 BOX22 CONFIRM. Forward ... moreCurrent Transfer Ratio (hFE), MIN: 40.
$
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Location: China
(1-3000MHz Gain 20dB. 0.01-2000MHz Gain 32dB. 0.1-2GHz Gain 64dB. gain: 32DB input and output impedance: 50 ohms. Input signal: ≤0 DBM(>0 DBM Input, the ... moreoutput signal has been distorted.). 1PCxLow Noise Amplifier Module.
$
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Condition: New
Location: China
• High IP3 and Po at low DC power consumption. 4 GHz with a unique combination of low noise and high IP3 making this amplifier ideal for sensitive high ... moredynamic range receiver applications. 0.05-4 GHz 50 ohm.
$
114.38
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Condition: New
Location: China
The maximum output current is 3.5A. USB 5V and DC5.5/2.1mm dual output (internal independent LC filter circuit is separated). -1 x DC5.5/2.1 Power Cord. ... more-1 x 1.5m Power Cord. Usually it cost about 35USD-50USD.
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Condition: New
Location: Bulgaria
2T391A2 Si Transistor. Made in USSR.
$
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Condition: Neu
Location: China
With microcircuit PHA-1H+ MMIC amplifier - 50 MHZ to 6 GHZ MMIC. BladeRF 2.0 Micro BT-100 Bias Tee Power Amplifier Module 50MHz-6GHz MMIC Antenna Amplifier ... more200mW. - Power consumption: 200mW. - The BT-100 is a wideband biased three-way TX power amplifier (PA) that draws current from the SMA connector of the bladeRF 2.0 micro.
$
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Location: Chula Vista, United States
RF Type: CDMA, GSM. Category: RF/IF and RFID,RF Amplifiers. Test Frequency: 1.9GHz. Frequency: 1.5GHz ~ 2.3GHz.
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Location: China
Amplification gain: 20dB (typical). 1PCx5-3500MHz RF Power Amplifier. Maximum output power: + 20dBm (100mW) @ 1dB compression point.
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Condition: New
Location: China
FM Tuner Applications. Maker:TOSHIBA. We will reply you ASAP.
$
55.00
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Condition: New
Location: China
Easy-to-use GaAs MMIC Low Noise Amplifi er (LNA) with. the MGA-64606 an ideal choice as a low noise amplifi er for. Bypass/ Shutdown mode. The LNA has ... morelow noise and high. Low current consumption in Bypass Mode,
$
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Condition: New
Location: China
High power, 30W high power, high conversion efficiency for positive and negative output. ± 12Vo module @ 24Vin typical value: 600mW. ± 152Vo module @ ... more24Vin typical value: 620mW. Minimum load: Positive and negative are independent of each other and do not affect each other, and can be unloaded.
$
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Condition: New
Location: Edinburg, United States
NEW & ORIGINAL . Test Frequency1GHz. RF TypeISM. Gain15dB ~ 16.2dB.
$
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Location: San Jose, United States
$
1.07
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Condition: Neu
Location: China
NEO-M8N-0 M8 Concurrent GNSS LCC Module. NEO-M8N with Mini Antenna. NEO-M8N with Big Antenna. Storage temp. –40° C to 85° C (NEO-M8N/Q). 2.7 V to 3.6 ... moreV (NEO-M8N/Q). Oscillator TCXO (NEO-M8N/Q). onboard SAW band pass filter (NEO-M8N/Q).
$
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Condition: New
Location: Ukraine
Military GaAs Microwave Mixer Diode Schottky 3A133A. The diode is good as mixer, detector or multiplier. Ideal for radio amateur applications. Lot of ... morethe 1 diode. Pulse Microwave Power Dissipation 25 mW.
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Condition: New – Open box
Location: Los Angeles, United States
Rheem Semiconductor produced transistors and diodes. Rheem struggled due to lawsuits from Fairchild over stolen process trade secrets. Rheem never stabilized ... moreand was sold to Raytheon in 1961. Material of Transistor: Si.
$
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Condition: New
Location: China
Download : Low Noise, High Linearity Active Bias Low Noise Amplifier. • High linearity performance. loss and high linearity achieved through the use of. ... more• Low noise amplifier for cellular infrastructure for GSM.
$
10.20
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Condition: Neu
Location: China
Galileo-ready E1B/C (NEO-M8N). Oscillator TCXO (NEO-M8N/Q). NEO-M8N-0 M8 Concurrent GNSS LCC Module. Storage temp. –40° C to 85° C (NEO-M8N/Q). 2.7 V ... moreto 3.6 V (NEO-M8N/Q). onboard SAW band pass filter (NEO-M8N/Q).
$
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Condition: New
Location: China
Maker :Vishay Microsemi PHI. High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA. · Ftau - 4.5 GHz @ 10v, 75mA. RF & MICROWAVE DISCRETE ... moreLOW POWER TRANSISTORS.
$
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Condition: New
Location: China
Avago Technologies MGA-68563 is an economical, easyto-use. This represents what Avago Technologies has managed. Maker :AVAGO. Download : Current-Adjustable, ... moreLow Noise Amplifier. The output of the amplifier is matched to 50 (below. ).
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Location: Huntington Beach, United States
Type Designator: TIS99. Quantity:2 pieces = (1 lot of 2 pieces). Made in West Germany. Forward Current Transfer Ratio (hFE), MIN: 55. Collector Capacitance ... more(Cc): 5 pF. Maximum Collector Current |Ic max|: 0.1 A.
$
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Condition: New – Open box
Location: Temple, United States
BIPOLAR TRANSISTOR - BJT. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 120 W. Forward Current Transfer Ratio (hFE), MIN: 500. Maximum Collector ... moreCurrent |Ic max|: 15 A.
$
118.31
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Condition: Neu
Location: China
Model: QM-LNA0218T. This RF low noise amplifier operates in the range of 2-18GHz. - P1dB output: 12dBm at 2GHz; 14dBm at 10GHz; 14dBm at 18GHz. - Gain: ... more18dB typical. Tested Gain - Input and output interface: SMA-K.
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Location: Wyckoff, United States
SEALED in ANTISTATIC bag. Material of Transistor: Si. Maximum Collector Power Dissipation (Pc): 0.36 W.
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Location: San Jose, United States
Expected MTBF at 85°C case temperature is 120,000 years at 2.8V; 60,000 years at 5V. • High directivity, 17 dB typ. • Output power, up to +11.4 dBm typ. ... moreThey have repeatable performance from lot to lot.
$
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Condition: New – Open box
Location: Los Angeles, United States
Replaced by 2N2398. Specs for 2N2398 (see picture for T2028) Polarity: PNP. Material of Transistor: Ge. Collector Capacitance (Cc): 1.5 pF.
$
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Condition: New
Location: China
Download : 3.3 -3.9GHz ½ Watt High Linearity Amplifi er.  Class A driver amplifi er for WiMAX Base Stations. High linearity and P1dB. Avago Technologies’ ... moreMGA-30316 is a high linearity ½ Watt. High MTTF for base station application.
$
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Condition: New
Location: China
JAD-20 is an automatic drain combined with die-casting aluminum shell, equipped with a float drainage system. When the drainage buoyancy is smaller than ... morethe weight of the drainage float and the pressure exerted by the compressed air, the drain port is closed; when the buoyancy rises, the drainage float rises and the drain port opens; when the condensate is reduced the drain port is closed again and so on.
$
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Location: China
With a high linearity, double-balanced active mixer core and integrated local oscillator buffer amplifier, the ADL5801 provides high dynamic range frequency ... moreconversion from 10MHz to 6GHz. A dedicated linearization architecture allows the mixer to provide enhanced IP3 performance at high input levels.
$
595.00
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Condition: New – Open box
Location: Goleta, United States
Manufacturer: Optical Zonu. L1 (1575.42MHz) 26dB. Current Draw: = 40 mA @ 5V. Temperature Range: - 40°C to + 85°C. In excellent condition. ESD Protection: ... more15 kV. Nominal Impedance: 50 ohms. Frequency Range: 1575.42 +/- 10 MHz.
$
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Condition: New
Location: Madison, United States
No header/leader. 6.8 kHz to 270 kHz output signal bandwidth. Multimode narrow-band radio products. Low current consumption: 17 mA. 16 dB front-end attenuator. ... more12 dB continuous AGC range. 370 Ω input impedance.
$
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Condition: New – Open box
Location: Chesapeake, United States
USED IN AN/BLD-1 DIRECTION FINDER SET. SORRY NO INTERNATIONAL ORDERS FOR THIS ITEM .
$
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Condition: Neu
Location: China
This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. LNA: 50-4000mhz. NF: SPF5189Z. In the case of amplifying weak signal, the noise of the amplifier ... moreitself may be very serious, so it is hoped that this noise will be reduced to improve the signal-to-noise ratio of the output.
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Condition: New
Location: Gaithersburg, United States
This is one Lot (Qty. RoHS Compliant. Gain: 12.7dB at 0.1GHz; 10.5dB at 1GHz. IP3: +30dBm at 0.5GHz. ).
$
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Condition: New
Location: China
Body Type: Axial. Tolerance: 5%. 3、Wire winding on ceramic rods and then soldering the joints to produce accurate resistance values and extend the life ... moreof the product. We will try our best to deal with the problem to make you satisfied.
$
3.12
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Condition: New
Location: China
Package includes:1PCS GPS antenna28db high gain 5cm Line length Active builtin ceramic antenna 25X25mm CA NEW. Antenna polarization: RHCP. Maximum gain: ... more> Based on 3dBic 7 * 7cm.
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Condition: New
Location: Morgan Hill, United States
The SGL0622Z is a low noise, high gain MMIC LNA designed for. Germanium technology and is housed in a cost effective. SGL0622Z is fabricated using highly ... morerepeatable Silicon. from 5 MHz to 4000 MHz and requires only 4 to 5 external biasing.
$
15.90
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Condition: New
Location: Hungary
Fₜ = 880Mhz. in lot of 100pcs, for as little 14 - 16 cents. Si-PNP RF transistors.
$
49.00
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Condition: New
Location: Ukraine
Analog: 154NU70, 2N193, 2N445, 2N94, 2SD75, T321N. The main technical characteristics of the MP38 transistor The mass of the transistor is not more than ... more2.0 g. • Transistor structure: n-p-n. • fh21b - The limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter and a common base: not less than 2 MHz;.
$
81.94
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Condition: New
Location: China
Upgraded Modified 10MHz OCXO Ultra-low Phase Noise Clock Board 3-Channnel Output for Raspberry Pi 4B. - The Raspberry Pi motherboard uses a low-precision ... morepassive crystal oscillator as the clock signal source, resulting in a relatively low signal quality of the clock.
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Condition: New
Location: San Jose, United States
This is a Skyworks Developing Board 2.3-2.7 GHz Low Noise Amplifier SKY65066-360LF, in good condition, ready to be use. Adjustable gain = 16.5 to 20.5 ... moredB @ 2.5 GHz. OP1dB = +18 dBm @ 2.5 GHz. High output OIP3 = +35.5 dBm @ 75 mA.
$
3.90
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Condition: New
Location: Taiwan
Type Designator: 2SD571. Polarity: NPN. Material of Transistor: Si. 1F OFFICE 1FB1-1 (4). Forward Current Transfer Ratio (hFE), MIN: 90.
$
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Condition: New
Location: Taiwan
Type Designator: MJE240. Polarity: NPN. Material of Transistor: Si. 1F OFFICE 1FB1-1 (2). Forward Current Transfer Ratio (hFE), MIN: 40. Collector Capacitance ... more(Cc): 50 pF.
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Condition: New
Location: Chula Vista, United States
This is a 2 ASB LNA Module Amplifier 1.4-1.6GHz Gain 15.9 dB ALN1502AT, in good condition, ready to be use. Type: Low Noise Amplifier. Gain: 15.9 dB. ... moreGain Flatness: ± 0.5 dB. IP3: 26 dBm. Impedance: 50 Ohms.
$
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Condition: New
Location: Taiwan
Polarity: NPN. Material of Transistor: Si. 5F OFFICE 5E4R 1-1 BOX4-1 CONFIRM. ☆☆☆☆☆☆☆☆☆☆☆☆☆☆☆☆☆☆☆. Forward Current Transfer Ratio (hFE), MIN: 5.
$
299.00
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Condition: Used
Location: San Leandro, United States
Used tested good.
$
69.00
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Condition: New
Location: China
The HMC1040LP3CE is a self-biased GaAs MMIC. and image reject mixers. The HMC1040LP3CE features. Download : GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 24 - ... more43.5 GHz. Low Noise Amplifier housed in a leadless 3x3 mm.
$
37.99
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Condition: New
Location: 福田区, China
No.: BLF245. All leads are isolated from the flange. - Qty: 1pc. - High power gain. - Withstands full load mismatch. - Good thermal stability. - We hope ... moreyou enjoy using our item.
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