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$3.00 Shipping Condition: New Location: 福田区, China We will reply you ASAP.
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$3.00 Shipping Condition: New Location: China The TAN 250A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. 250 Watts, 50 Volts, ... morePulsed. Download :high power COMMON BASE bipolar transistor.
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$3.59 Shipping Condition: New Location: China Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. 500W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS ... moreTransistor. High Drain-source Avalanche Energy Absorption Capability.
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$3.00 Shipping Condition: New Location: 福田区, China Maker:Sumitomo. Operation Mode CW Operation. Note Tc(op)=+25°C. @Pout S.C.L. (dBm) 27.5.
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$3.95 Shipping Condition: New Location: Huntington Beach, United States
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Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot (Qty. Device Marking: R24. ft: 7GHz typ. hfe: 120 typ at 10V/20mA. NF: 1.4dB at 1GHz. ).
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Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot (Qty. RoHS Compliant. ft: 1GHz min.25mA; 5V. hfe: 90 typ at 1V/2mA. ).
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Free Shipping Condition: New Location: Bordentown, United States BFR91 By MOTOROLA. BFR91 Silicon NPN Planar RF Transistor 4.5 GHz TO-50. New and Original Motorola. You are not 100% satisfied with an item you received?. ... moreWhatever the reason is, you won't be stuck with an item you cannot use or you do not want.
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$7.00 Shipping Condition: New Location: Pardubice 12, Czech Republic (Unused Silicon NPN UHF-Microwave RF Transistors BFQ69 in a SOT-37 Plastic case. C = 15 mA, f = 200 MHz) 5.8 GHz. Storage temperature range -65° C až ... more+150 ° C. The price is for two transistors (2 pcs).
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$6.20 Shipping Condition: New Location: Bulgaria
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Free Shipping Condition: New Location: Kissimmee, United States It counts with a dynamic range and good current characteristic. Transistor Model: SI2302DS SI2302 R24 (hFE Classification: R24 / hFE 80 to 160). hFE Classification: ... moreR24 / hFE 80 to 160. Installation Type: SMD Surface Mounted, Pins Are Ready To Solder.
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Free Shipping Condition: New Location: Potomac, United States This is one Lot (Qty. hfe: 50 to 150. General Specifications for HBFP-0420 P1 dB: +12dBm at 1.8GHz. ).
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$7.00 Shipping Condition: New – Open box Location: Poland Orginal NEC.
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Free Shipping Condition: New Location: China 1 set of MMDVM Hotspot Module. -Jumbo-SPOT-RTQ is a fully self-contained digital access point that supports DMR, Dstar, P25 and system convergence communications. ... moreFully assembled and tested in a rugged aluminum housing.
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$3.00 Shipping Condition: New Location: China Maker :TRIQUINT [TriQuint Semiconductor]. 25 W 2.3GHz - 2.5GHz N-Channel E-Mode, Lateral MOSFET. We will reply you ASAP.
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$3.00 Shipping Condition: New Location: China The TAN 250A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. 300 Watts, 50 Volts, ... morePulsed. Download :high power COMMON BASE bipolar transistor.
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$6.58 Shipping Condition: New Location: Canada
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Free Shipping Condition: New Location: Gaithersburg, United States BFP405 General Specifications Application Note 020 and 021 for Low Noise Amplifier in 1.9GHz using BFP405 Application Note 002 for 10GHz Dielectric Resonator ... moreOscillator (DRO) at 10 GHz using BFP405.
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Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot (Qty. ft: 2.5GHz typ.25mA; 1GHz min. RF Gain (s21): 12.7dB at 500MHz. hfe: 20 to 150 typ at 1V/2mA. IP3: +23dBm. ).
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$4.80 Shipping Condition: New Location: Longmont, United States Listed by NTE equivalent. 2N706 NPN 20V 10mA NTE123A. 2N2219 NPN 30V 500mA NTE123. 2N2219A NPN 40V 800mA NTE123. 2N2222 NPN 40V 600mA NTE123A. 2N2222A ... moreNPN 40V 600mA NTE123A. 2N2369 NPN 15V 200mA NTE123A.
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Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot (Qty. RF Gain (s21): 12.7dB at 500MHz. hfe: 20 min 90 typ at 1V/2mA. NF: 4.5dB typ at 500MHz. ).
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$7.00 Shipping Condition: New Location: Poland Transistor RF BFP420 25 GHz.
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$4.95 Shipping Condition: New Location: San Jose, United States This is a new Qorvo RF JFET Transistor DC-6GHz 32Volt GaN 10 Watt Peak. The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates ... morefrom DC to 6 GHz. Transistor Type: HEMT. Transistor Polarity: N-Channel.
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$4.65 Shipping Condition: New – Open box Location: Windber, United States Up for sale are Motorola transistors P/N: BFR92ALT1. This Buy It Now is for 25 transistors. NPN Silicon Transistor. D/C: 0102 Manufacturer data sheet ... moreis available here:Data Sheet. Local pickup is also available.
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$10.40 Shipping Condition: New Location: Ukraine Collector Power Dissipation 175mW. GT387A Military Germanium Low Noise UHF NPN Transistor. Designed for use in UHF amplifiers and oscillators (2.16 GHz). ... moreMade in USSR. Lot for 2 pcs. UK, Italy, FRANCE, Greece, Germany, Canada, Malaysia, Indonesia, Taiwan, etc.
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$3.95 Shipping Condition: New – Open box Location: Salem, United States • GaAs HJ-FET structure. • High power added efficiency : 60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm. • High output power : Pout ... more= +27.0 dBm TYP. Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm.
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Free Shipping Condition: New Location: Gaithersburg, United States BFR360F General Specifications Application Note 061 W-CDMA 2.3 GHz VCO using BFR360F Application Note 150A 900 MHz Low Noise Amplifier Using the BFR360F ... moreFrequency Ft: 14GHz typ. This is one Lot (Qty. ).
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Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot (Qty. the device marking for this item is R35. ft: 9GHz typ. Spec see Data Sheet at hfe: 125 to 250 typ at 8V/20mA with device marking: ... moreR35. ).
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$3.00 Shipping Condition: New Location: China Download : 2.3–2.5 GHz 29dBm High Linearity Wireless Data Power Amplifi er. ETSI spectral mask compliant at 29dBm output power. Avago Technologies’ MGA-43228 ... moreis a power amplifi er for. as a power amplifi er for IEEE 802.16 (WiMAX) and WLL.
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$3.00 Shipping Condition: New Location: China Maker : AVAGO. wideband applications. • Amplifier for cellular, cordless. response from DC to 3.5 GHz. 50-ohm matched silicon. Agilent’s HP25 silicon ... morebipolar. breakdown (25 GHz fT at 6V. single polysilicon. ).
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$7.18 Shipping Condition: New Location: 金东区, China 1 set of MMDVM Hotspot Module. -Jumbo-SPOT-RTQ is a fully self-contained digital access point that supports DMR, Dstar, P25 and system convergence communications. ... moreFully assembled and tested in a rugged aluminum housing.
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$3.00 Shipping Condition: New Location: China Maker : Fujitsu. Fequency f (GHz) 2.6. Frequency Band L. High Output Power: P1dB = 42.5dBm (Typ.). High Gain: G1dB = 13.0dB (Typ.). G1db.Typ (dB) 11. ... moreHigh PAE: ηadd = 34% (Typ.). We will reply you ASAP.
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Free Shipping Condition: New Location: Dayton, United States (This is for 1) pc of the MRF911 Transistor. TO-5 NPN RF Transistor. used in RF applications.
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$5.29 Shipping Condition: Neu Location: Rheda-Wiedenbrück, Germany Der Motorola 2N5109 ist ein leistungsstarker NPN-Bipolartransistor, der speziell für Hochfrequenzanwendungen entwickelt wurde. Mit seinem robusten Design ... moreund seinen herausragenden elektrischen Eigenschaften bietet dieser Transistor eine zuverlässige Lösung für Projekte im Hochfrequenzbereich.
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Free Shipping Condition: New Location: Chula Vista, United States This is a 5 NXP BFG424F 25 GHz wideband transistor, in good condition, ready to be use. high frequency oscillators e.g. Dielectric Resonator Oscillator ... more(DRO) for Low Noise Block (LNB ). We’re e-liquidators.
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Free Shipping Condition: New Location: Potomac, United States BFP450 General Specifications Frequency Ft: 24GHz typ. This is one Lot (Qty. Device Marking: ANs. Application Note 157 for 869 MHz Power Amplifierwith ... morethe BFP405 ).
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Free Shipping Condition: New Location: East Brunswick, United States BFW92 NPN UHF-A 25V 25mA 1.6Ghz TRANSISTOR. New and Original.
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Free Shipping Condition: New Location: Potomac, United States This is one Lot (Qty. RF Gain max: 13.5dB at 500MHz. hfe: 20 to 90 typ at 1V/2mA. Spec see Data Sheet at ).
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$3.00 Shipping Condition: New Location: 福田区, China : RFG1M20180. Maker: RFMD. ■ Advanced GaN HEMT Technology. ■ Large Signal Models Available. ■ 48V Operation Typical. ■ Typical Peak Modulated Power. ■ ... moreSingle Circuit for 1.8GHz to. ■ RF Tested for Peak Power Using.
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Free Shipping Condition: New Location: Kissimmee, United States It counts with a dynamic range and good current characteristic. Transistor Model: SI2302DS SI2302 R25 ( hFE Classification: R25 / hFE 50 to 100). hFE ... moreClassification: R25 / hFE 50 to 100. Installation Type: SMD Surface Mounted, Pins Are Ready To Solder.
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Free Shipping Condition: New – Open box Location: Wilton, United States Mfg. Part# BFG135. Wideband Transistors. Specifications NPN.
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Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot (Qty. 25) of New Motorola NPN Low Noise Bipolar UHF and Microwave RF Transistor. BFR92ALT1 General Specifications Frequency Ft: 4.5GHz ... moretyp. hfe: 40 min.
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$4.39 Shipping Condition: New Location: Costa Mesa, United States Replaces: NTE2403. hFE: 20 Minimum. Insertion Power Gain, GPE: 18dB Typical.
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Free Shipping Condition: New Location: Victor, United States GALI-5+ RF Amplifier IC. No warranty. No technical support or repairs.
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$9.40 Shipping Condition: New Location: Ukraine GT383B Military Germanium Low Noise UHF NPN Transistor. Designed for use in UHF amplifiers (1.5 GHz). Made in USSR. at UE= 3.2V, IE= 15mA 1.5 GHz. at ... moreUCB= 3.2V, f = 1 GHz 4 dB. Static Current Gain. Frequency Range.
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Free Shipping Condition: New Location: Potomac, United States BFP540 General Specifications Application Note 057 A 1.9 GHz Low Noise Amplifier optimized for high IP3 using BFP540 Frequency Ft: 30GHz typ. This is ... moreone Lot (Qty. Device Marking: ATs. ).
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Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot (Qty. hfe: 20 to 150. Spec see Data Sheet at ).
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Free Shipping Condition: New Location: Dayton, United States 2SC3358 NEC NPN Silicon Transistor- 7 GHz. Low Noise Amplifier- one lot of 50 pcs
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$5.15 Shipping Condition: New – Open box Location: Granbury, United States THIS IS FOR (10 PCS) OF FMMT5179TA BY ZETEX. Manufacturer: (ZETEX) Diodes Incorporated. RF TRANS NPN 12V 2GHZ SOT23-3. Transistor Polarity: NPN. Maximum ... moreDC Collector Current: 50 mA. Continuous Collector Current: 50 mA.
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Free Shipping Condition: New Location: Potomac, United States This is one Lot (Qty. RoHS Compliant. I have two PCB made for this MMIC IP3: +29dBm at 0.5-2.5GHz, 5V. Detail Spec on Web as follows ).
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$4.39 Shipping Condition: New Location: Costa Mesa, United States Replaces: NTE65. Power Dissapation Pd: 180mW. Gain: Hfe: 30 Typical.
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Free Shipping Condition: New Location: Gaithersburg, United States Ft: 12GHz typ. This is one Lot (Qty. hfe: 70 to 150 at 3V/10mA. ).
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$4.49 Shipping Condition: Neu: Sonstige (siehe Artikelbeschreibung) Location: Neunkirchen-Seelscheid, Germany UHF-Transistor BFQ69. 25V, 30mA, 200mW, 5,8GHz. ungebraucht, aus Lagerbestand.
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$9.00 Shipping Condition: New – Open box Location: Morehead, United States Nice general purpose transistor. In Anti-Static bag, light weight! LARGE QUANTITY AVAILABLE, ASK.
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Free Shipping Condition: New Location: Dayton, United States Your Complete Electronic Parts Source" 2SK83 This is for 2) pcs of the 2SK83 FET Transistor. Brand New"Original" Panasonic( Matsushita) ... moreFET Transistor. Similar to the ECG451 Vcbo= 25v; Ic= 15mA; Pw= 100 mW TO-92 N Channel JFET Transistor used in VHF RF applications Quantity discount is available. Contact Seller for addtional information or questions. Consolidated Electronics was created in February of 1979. We are specialists in consumer semiconductors stocking over 25.000 different items. If you are in the US or Canada, you can call us Toll-Free at 1-800-543-3568 check out other items in our EBAY STORE Also check our web site for additional items not listed here on EBay. www.ceitron.com Powered by The free listing tool. List your items fast and easy and manage your active items.
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Free Shipping Condition: New Location: Gaithersburg, United States BFP620 General Specifications Application Note 060A High IP3 Low Noise Amplifier for 1900 MHz using BFP620 Application Note 130 Low Noise Amplifier2.4GHz ... moreusing BFP620 Agilent Application Note for 1900MHz Low Noise Amplifier using BFP620.
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Free Shipping Condition: New Location: Dayton, United States (This is for 1) pc of the 3SK97 Transistor. RF Pin N Channel GasFET Transistor. Vcbo=13V; Ic=80mA; Pc=350mW; ft= 1GHz. used in Older RF applications.
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$4.75 Shipping Condition: New Location: North Augusta, United States Part Number: NTE64. At Atlas Industrial Services, we are an authorized NTE Electronics distributor and carry the full line of NTE products. Manufacturer: ... moreNTE Electronics. T : 4.5GHz. D : 0.375W.
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$3.00 Shipping Condition: New Location: China (0.9-3.5)GHz frequency range. The LNA uses Avago Technologies’. Low Shutdown Current. CMOS compatible shutdown pin (SD) current @ Vsd=. A CMOS-compatible ... moreshutdown pin is included. High Gain and Linearity.
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$12.89 Shipping Condition: New – Open box Location: München, Germany MJD44H11 NPN POWER TRANSISTOR. 10 pieces MJD44H11 NPN POWER TRANSISTOR. MJD44H11 is compareable to 2SC4344 and 2SC4979. It is inteded for various switching ... moreand general purpose applications. 8A | Vceo 80V | Vebo 5V | Ptot 20W | DPAK (TO-252).
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KT920V (КТ920В) 2N6081 Si n-p-n VHF RF POWER TRANSISTOR NPN 0.4 GHz 25 W NOS
About Item: Lot of 1. More than 10 available. FEATURES: KT920V(КТ920В) designed to operate in the VHF circuits at frequencies 30-200 MHz power amplifier. Equivalent to the 2N6081. The Transistor contains 0.07 gramme of Pure Gold(9999) QUICK REFERENCE DATA: Structure: NPN Max. Ucb for a given back to the current and open circuit e. Ucb max) 36 V Max. Uce at a given current. And given to the conj. in the chain b-e. Uce max) 36 V The maximum allowable current of(Ic max) 3 A Static coefficient of current transfer h21e 25 Max. frequency of the current transfer ratio- 400 MHz Maximum power dissipation at(P) 25 W Manufacturer: Russia Electrical parameters for acceptance and delivery(t case- 25 °C) Payment Options: We accept PayPal and bank payments. Shipping Options: We work with the lowest prices for our customers for shipping. Do you want ... morea tracking number? Please add $ 2.5. Kindly Inform us before paying. For regular economy-mail delivery time is about 5 up to 45 business days(9 weeks! to most of the countries. Delivery time% of shipments that arrive in the said delivery time Country working days(without holidays and weekends) 15-24 25-34 35-45 45 3 weeks 5 weeks 7 weeks 9 weeks 9 weeks United States 5% 50% 40% 5% 0% Canada 10% 70% 15% 5% 0% South America 0% 30% 60% 10% 0% Japan 30% 50% 20% 0% 0% Thailand 10% 40% 45% 5% 0% India 0% 40% 55% 5% 0% Indonesia 0% 40% 55% 5% 0% New Zealand 0% 30% 60% 10% 0% Australia 0% 30% 60% 10% 0% Russia 0% 30% 60% 10% 0% Europe 60% 30% 10% 0% 0% Israel 10% 60% 28% 2% 0% The delivery time depends on the destination. Holidays, customs clearance factor and other factors. Please do not open case on eBay before this period has elapsed or before you communicate with us if have a problem. You need a faster delivery.Shipping is expensive- contact us before paying. We ship your package to your eBay address. Please update your complete address including full name and phone number during checkout. We are not responsible
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