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Free Shipping Condition: Seller refurbished Location: China
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Free Shipping Condition: New Location: United States Power divider will splits the signal evenly and contains two SMA connectors for maximum reliability. This splitter is made of corrosion-resistant materials ... morefor ultimate durability and is perfect for linking two devices.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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$35.00 Shipping Condition: Used Location: Poland Used, coming from the disassembly of a functional UMTS module, module marked:QWD1DA50, producer:HUAWEI. RF frequency power amplifier, module power: 50W. ... moreProducent code:QWD1DA50 MRF 6S21140HS. Symbol:QWD1DA50 MRF 6S21140HS.
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$4.35 Shipping Condition: Seller refurbished Location: South El Monte, United States Up for sale is one piece TOSHIBA S-AV22A MODULE RF Power Amplifier Module. Great Deal (RH). LED Light Bulbs. Air Intake. Engine Bolts. Phone Accessories. ... moreBar End Mirrors. Fork Preload Adjuster.
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$2.54 Shipping Condition: Neu Location: China Output attenuation: 6dB. 1x Rf Microwave Resistor Power Distributor Module. Power Frequency: DC-5G. Joint Form: SMA-K (Standard Pudenda, External Screw ... moreInner Hole). Long service life. Due to the difference between different monitors, the picture may not reflect the actual color of the item.
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$4.80 Shipping Condition: New Location: Longmont, United States Listed by NTE equivalent. 2N706 NPN 20V 10mA NTE123A. 2N2219 NPN 30V 500mA NTE123. 2N2219A NPN 40V 800mA NTE123. 2N2222 NPN 40V 600mA NTE123A. 2N2222A ... moreNPN 40V 600mA NTE123A. 2N2369 NPN 15V 200mA NTE123A.
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$2.99 Shipping Condition: For parts or not working Location: China XC BROADBAND WIRELESS 6G RF POWER AMPLIFIER MODULE FLM6472-4F.
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$5.77 Shipping Condition: Used Location: 江夏区, China ,RF Line / UHF Power Amplifier. Japan, South Korea. We solve all your problems and we cover all your rights. Thansks for your support! Condition: Used.
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Free Shipping Condition: New Location: San Jose, United States Type: RF Power MMIC. Manufacturer: MwT. gain is 15 dB. The typical output IP3 is 48 dBm and P1dB is 36 dBm. output power of 29 dBm. P1dB: 36 dBm. IP3: ... more50 dBm. Frequency Min: 2.5 GHz.
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$3.00 Shipping Condition: New Location: China 1 x 433MHz 5W RF Power Amplifier. Item Type: RF Power Amplifier. RF Connector: Standard SMA Female Connector. Input Power: 0.1W (20dBm).
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$6.00 Shipping Condition: Used Location: Lomita, United States Gain (dB, min): 24. Gain Flatness (±dB, max): 1.5. Single use - working pull. Output Power @ 1 dB Comp (dBm, min): 10. MFR SPECS.
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$3.00 Shipping Condition: New Location: China Download : RF POWER AMPLIFIER MODULE UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER. Maker : TOSHIBA. Storage Temperature Range Tstg −40~110 ... more℃. We will reply you ASAP.
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$40.96 Shipping Condition: New – Open box Location: Canada
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$3.00 Shipping Condition: New Location: 福田区, China Maker:ADPOW[Advanced Power Technology]. • Very High Breakdown for Improved Ruggedness. • Output Power = 750 Watts. • Low Thermal Resistance. We will reply ... moreyou ASAP.
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$3.00 Shipping Condition: Used Location: China AE 8705014 AE RF Power MODULE APEX. Professional one station high-frequency tube,RF. Microwave Amplifier. We will reply you ASAP.
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$8.75 Shipping Condition: New Location: Canada
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Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot (Qty. Frequency Ragne: 1700 - 1950MHz. Output Power: +33dBm at 3.5V. ).
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$6.90 Shipping Condition: New – Open box Location: Sunnyvale, United States TriQuint TQP3301 8W RF power amplifier eval board AP561 PCB 2110- 2170MHz NEW
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Free Shipping Condition: New Location: San Jose, United States Typical two-carrier WCDMA performance at 2140 MHz, 28 V, 7 W avg. --Typical CW performance, 2140 MHz, 28 V. --Integrated ESD protection. Output power ... moreat P–1dB ~ 20 W. 15 W (CW) output power. IMD3 = –32 dBc.
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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$12.95 Shipping Condition: New – Open box Location: United States DUAL-BAND CDMA/AMPS OR TDMA/AMPS 3V POWER AMPLIFIER
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Free Shipping Condition: New Location: United States F = 0.1 MHz gain = 32dB. F = 500 Mhz gain = 32dB. F = 1000 MHz gain = 32dB. F = 1500 Mhz gain = 32dB. F = 2000 MHz gain = 32dB. Gain amplifier -This product ... morecan be applied to several rf receive frontal and increase the communication distance.
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$3.99 Shipping Condition: New Location: Miami, United States MACOM TYCO MA02205AF 1800 MHz - 2000 MHz RF Power Amplifier 3.6V. 5W TSSOP-16. Part Number: MA02205AF / 2205AF-R13 / MA2205AF-R13. Manufacturer: MACOM ... moreTYCO. Expanded Frequency Range: 1800 MHz - 2000 MHz.
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$2.54 Shipping Condition: Neu Location: China Amplifier gain:. -This product can be applied to various rf receive front-end and increases communication distance. Amplifier working frequency of the ... morelower limit is subject to input and output capacitor, the default value is 0.1 uF, working to 0.1 MHz.
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$3.00 Shipping Condition: New Location: China
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$3.50 Shipping Condition: New Location: China 1 x RF Biaser Bias Tee 10MHz-6GHz For HAM Radio RTL SDR LNA Low Noise Amplifier. 1 x RF Biaser Bias Tee 10MHz-6GHz Amplifier +Case LNA Low Noise HAM Radio ... moreRTL SDR. Raspberry Pi. Arduino Module. BiasTee consists of ultra-wideband, near idealized, high frequency inductor and capacitors without resonance points.
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$5.40 Shipping Condition: New – Open box Location: Wytheville, United States 4 PIECES PF1010A HITACHI. MOSFET POWER AMPLIFIER MODULE FOR P/C LAN. 806 - 824MHz.
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$3.00 Shipping Condition: Used Location: China AE 21100012-00 AE RF Power MODULE APEX. Professional one station high-frequency tube,RF. Microwave Amplifier. We will reply you ASAP.
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Free Shipping Condition: New Location: China 1 xAssembled 150 w FM AMP. Cornici e articoli da esposizione.
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$3.00 Shipping Condition: New Location: 福田区, China Maker:ADPOW[Advanced Power Technology]. • Very High Breakdown for Improved Ruggedness. • Output Power = 750 Watts. • Low Thermal Resistance. We will reply ... moreyou ASAP.
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$3.00 Shipping Condition: New Location: China Maker:FREESCALE [Freescale Semiconductor, Inc]. RF Power LDMOS Transistors High Ruggedness. • Internally Input Matched for Ease of Use. RF Power Field ... moreEffect Transistors. • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts Avg.
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$5.15 Shipping Condition: New – Open box Location: Granbury, United States The DEV-ADC34J22 provides a reference clock to the SOCKIT host FPGA system board, and can also utilize external trigger and reference clock inputs. Other ... moreHSMC based FPGA host boards can also be utilized.
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Free Shipping Condition: New Location: San Jose, United States The TQM8M9076 is targeted for use in wireless infrastructure, point-to-point, or can be used for any general purpose wireless application. • IF and RF ... moreApplications. low noise while providing digital variable gain with 31.5?.
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$3.00 Shipping Condition: New Location: China Manufacturer : Avago. Download :CDMA Cell 3x3 Power Amplifier Module. We will reply you ASAP.
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$3.00 Shipping Condition: New Location: 福田区, China Download : RF Power Amplifier Module. Maker : Motorola. We will reply you ASAP.
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$10.80 Shipping Condition: Used Location: Canada Power RF: 15 Watts. Freq: 1930–1990 MHz.
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$42.21 Shipping Condition: Brand New Location: China Type:RF Power Amplifier. 1pc RF Power Amplifier. hope you could understand. Gain: 12DB 2450MHz.
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Free Shipping Condition: New Location: Hebron, United States
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$3.00 Shipping Condition: Used Location: 福田区, China AE AE85000015 AAE85000015 AE RF Power MODULE APEX. Professional one station high-frequency tube,RF. Microwave Amplifier. We will reply you ASAP.
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$5.35 Shipping Condition: New Location: Phoenix, United States Manufacturer Part Number: PN3563. Transistor Polarity: NPN. Product Category: RF Bipolar Transistors. This device is designed for use as RF amplifiers, ... moreoscillators and multipliers with collector currents in the 1.0mA to 30 mA range.
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$3.00 Shipping Condition: New Location: 福田区, China Download : RF Power Amplifier Module. Maker : Motorola. We will reply you ASAP.
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$3.40 Shipping Condition: New Location: China (0.01-2000MHz Gain 32dB. gain: 32DB input and output impedance: 50 ohms. 1-3000MHz Gain 20dB. 0.1-2GHz Gain 64dB. 1PCxLow Noise Amplifier Module. Input ... moresignal: ≤0 DBM(>0 DBM Input, the output signal has been distorted.).
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$3.00 Shipping Condition: New Location: China Amplifier gain:. Amplifier working frequency of the lower limit is subject to input and output capacitor, the default value is 0.1 uF, working to 0.1 ... moreMHz. -This product can be applied to various rf receive front-end and increases communication distance.
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Free Shipping Condition: New Location: Torrance, United States TRIQUINT / Qorvo RF POWER AMPLIFIER MODULE. WLAN/Bluetooth front-end module in ULTRA SMALL 4 X 4 MM FOOTPRINT for 802.11 a/b/g/n and Bluetooth applications. ... moreThe premier online independent passive component distributor.
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$2.20 Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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Free Shipping Condition: New Location: Jamaica, United States F = 0.1 MHz gain = 32dB. F = 500 Mhz gain = 32dB. F = 1000 MHz gain = 32dB. F = 1500 Mhz gain = 32dB. F = 2000 MHz gain = 32dB. -This product can be applied ... moreto several rf receive frontal and increase the communication distance.
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Free Shipping Condition: New – Open box Location: Clinton Township, United States
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Free Shipping Condition: New Location: San Jose, United States Typical two-carrier WCDMA performance at 2140 MHz, 28 V, 7 W avg. --Typical CW performance, 2140 MHz, 28 V. --Integrated ESD protection. Output power ... moreat P–1dB ~ 20 W. 15 W (CW) output power. IMD3 = –32 dBc.
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Free Shipping Condition: New Location: Potomac, United States This Designer Kit is for RF Power Amplifier with heatsink. Size of the housing is 3.00" x 2.00" x 0.83" base plate is 3.75" x 2.00" ... moreHousing can hold PCB size 2.60"x1.60"x0.031" Works for all my RF Power Amplifier MPA Series PCB below: Kit include: Machined Housing and Cover. 1 ea Heatsink. 1 ea SMA 2-Hole Flange Jack Receptacle Connector. 2 ea 4-40X1/4 Hex Head Screw(for Heatsink) 4 ea EMI 5000pF Feedthrough Cap 8-32. 1 ea Ground Solder Terminal with Washer. 1 ea 2-56X3/16 Hex Head Screw(for SMA Connector) 4 ea 2-56X1/4 Pan Head Screw(for mount PCB) 8 ea 2-56X3/16 Flat Head Screw(for Cover) 6 ea
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Free Shipping Condition: New Location: China LNA 0.1-2GHz Gain 64dB RF Broadband Amplifier Board Low Noise DC 12V Description: low noise amplifierLNA2-2G-64DB 1. Power supply voltage:12V Direct(Current ... more70MA)Shielding enclosure 2. Gain:64DB input and output impedance: 50 ohm 3. Maximum output power:10dBm (2VPP50Under ohmic load) 4. Input signal:
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$5.00 Shipping Condition: Used Location: Springfield, United States
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$5.45 Shipping Condition: New Location: Addison, United States The principle is simple: the module local oscillator circuit adopts the local oscillator circuit form of the black-and-white TV tuner. The frequency is ... moresuper stable. It is not the ordinary capacitor three-point oscillation circuit.
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$6.50 Shipping Condition: New Location: San Clemente, United States
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Free Shipping Condition: New Location: Union City, United States We usually fill the inside of the case with 3-5cm thick foam board to protect the parts. We will make custom wooden boxes for them.
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$4.50 Shipping Condition: New – Open box Location: Temple, United States MINI CIRCUITS. Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max, Hybrid. WIDE BAND LOW POWER. 5-PIECE LOT. Sub Category. JESD-609 Code. RF/Microwave ... moreAmplifiers. Power Supplies (V).
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Free Shipping Condition: New Location: China Module, crystal oscillator, relay and all kinds of electronic. To other remote country.
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$3.00 Shipping Condition: New Location: 福田区, China The RF2044 is a general purpose, low-cost RF amplifier. Maker: RFMD. amplification in wireless voice and data communication. 50Ω gain block. Applications ... moreinclude IF and RF. • IF or RF Buffer Amplifiers.
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$3.00 Shipping Condition: New Location: China : MRF6VP2600HR6 MRF6VP2600H. RF Power LDMOS Transistors High Ruggedness. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 ... moreWatts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
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$3.00 Shipping Condition: New Location: China Maker :QORVO. LTE / WCDMA / CDMA / EDGE / GSM. We will reply you ASAP.
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