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55.00
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Location: China
Application Low Noise Amp, TVRO, BTS. We will reply you ASAP.
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Location: Lewis, United States
Despite its small physical outlines, the CDCE706 is very flexible. It has the capability to produce an almost independent output frequency from a given ... moreinput frequency. CDCE706 Programmable 3-PLL Clock Synthesizer / Multiplier / Divider.
$
21.89
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Location: China
Power Gain: 60dB 500M. Item Type: RF Wideband Amplifier. It can be used for various RF receiving front ends to increase the communication distance. When ... moreworking within 500m/1640.4ft, the gain flatness is higher and the power consumption is lower.
$
19.00
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Condition: New
Location: China
The MHW7222 is designed specifically for up to 750 MHz CATV systems as amplifiers in trunk and line extender applications. This amplifier features. • ... moreSpecified for 110–Channel Performance. Maker:Motorola.
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Location: Edinburg, United States
RF TypeCellular, LMDS, MMDS. Test Frequency2.7GHz.
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Location: Gaithersburg, United States
This is one Lot(Qty. 2) of Develop PCB for 2-Stage Agilent 0.5- 6GHz Low Noise MMIC GaAs Amplifier. 5V 20dB High Gain, Part Nubmer: MGA-86563 in SOT-363(SC-70) ... morePackage with SAW Filter in between 2 MMIC amplifier. Size of the PCB 1"x1"x0.031" FR-4 material, double-sided with solid plated ground plane on the back. Will fit SMA/SMB or MCX RF connector with 0.031" board space. Please check link attached below for schematic and assembly drawing. The idea for this PCB is to provide high gain and selected narrow band of interest by using SAW filter in between two MMIC amplifier. Since the gain is very high by using 2 cascade MGA-86563. Without SAW, it could result an oscillation. the footprint for SAW filter is normal 3.00x3.00mm(2.00x2.00mm or 3.50x3.50mm can be used by manual solder with carefully workmanship) Gerenal Specifications for MGA-86563: Frequency Ragne: 500MHz- 6.0GHz Noise Figure: 1.6dB at 2.4GHz Gain: 21.8dB at 2.4GHz P1 dB: +3.1dBm at 2.4GHz IP3: +15dBm at 2.4GHz Supply: 6V/14mA Package: SOT-363 Data Sheet for MGA-86563 on Web as follows: Reference Schematic for this Develop PCB: Assembly Drawing for this Develop PCB: You can buy 10pcs MGA-86563. Link attached below:
$
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Condition: Neu
Location: China
The AD831 is a low distortion, wide dynamic range, single-chip mixer suitable for RF-IF downconversion in HF and VHF receivers, second mixer in DMR base ... morestations, DC-baseband conversion, quadrature modulation And demodulation as well as Doppler shift detection in ultrasound imaging applications.
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Location: China
1 x LNA 50-4000MHz SPF5189 RF Amplifier. This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. LNA: 50-4000mhz. In the case of amplifying weak signal, ... morethe noise of the amplifier itself may be very serious, so it is hoped that this noise will be reduced to improve the signal-to-noise ratio of the output.
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Location: China
Body Type: Axial. Tolerance: 5%. 3、Wire winding on ceramic rods and then soldering the joints to produce accurate resistance values and extend the life ... moreof the product. We will try our best to deal with the problem to make you satisfied.
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Location: China
This amplifier is an upgraded version of the 5-3500MHz amplifier. The typical gain is 35dB. Amplification gain: Gain=35dB (typical). This amplifier is ... moreused for low-noise amplification of various radio frequency signals, which can increase the receiving effect.
$
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Condition: New
Location: Ukraine
1x 2T903B / KT903B = 2SC517 USSR Transistors. KT903B (2T903B). Made in USSR. NEW, NOS, MATCHED DATE. The maximum permissible continuous (pulse) Collector ... moreCurrent 3000 (5000) mA. Static current transfer ratio of bipolar transistor in the common-emitter 40-180.
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Location: Huntington Beach, United States
(Original Factory Signetics). Wide-Band High-Frequency Amplifier. The NE/SA5204A is a high-frequency amplifier with a fixed insertion. the amplifier ideal ... morefor cable TV applications. The NE/SA5204A. • Frequency counters.
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Location: Canada
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23.00
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Location: China
5.0W, to 400MHz, 28V. • 100% Tested For Load Mismatch At All Phase Angles. Maker:MOTOROLA. • Small–Signal and Large–Signal Characterization. Output Power ... more= 5.0 Watts. We will reply you ASAP.
$
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Location: Lewis, United States
Zigbee 2.4GHz RF Front End, PA, LNA, RF matching components. This test is easy for any engineer or technician. Lot size: 5.
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Location: Lewis, United States
Zigbee 2.4GHz RF Front End, PA, LNA, RF matching components. This test is easy for any engineer or technician. Lot size: 2.
$
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Location: Ukraine
•Static current gain of a bipolar transistor in the common-emitter: (25. 50). •Maximum permissible continuous (pulse) current collector: 20 mA. •The maximum ... moreallowable collector power dissipation without a heatsink (withheatsink): 0.15 W.
$
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Location: Universal City, United States
New in box BLONDER-TONGUE CMA-b LOW NOISE SOLID STATE VHF PREAMPLIFIER channel 6 stock number 4706 comes with instruction Manuel and parts Other channels ... moreavailable in my other listings
$
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Condition: New – Open box
Location: Los Angeles, United States
Equivalent to 2N1744. Polarity: PNP. Material of Transistor: Ge. Forward Current Transfer Ratio (hFE), MIN: 10. Collector Capacitance (Cc): 1.5 pF.
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Location: Winston Salem, United States
NEW*Loose Stock Item) PHILIPS ECG 398 2SA968 SI PNP TRANSISTOR Type Designator: ECG398 Material of transistor: Si Polarity: PNP Maximum collector power ... moredissipation(Pc) W: 25 Maximum collector-base voltage |Ucb|. V: 200 Maximum collector-emitter voltage |Uce|. V: 150 Maximum emitter-base voltage |Ueb|. V: 0 Maximum collector current |Ic max|. A: 2 Maximum junction temperature(Tj) °C: 150 Transition frequency(ft) MHz: 5 Collector capacitance(Cc) PF: Forward current transfer ratio(hFE) Min: 100 Noise Figure. DB: Package of ECG398 transistor: TO220
$
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Condition: Neu
Location: China
This is a 5-6000MHz RF signal power amplifier with 20dB gain. 1PC 5-6000MHz 20dB RF Power Amplifier. 5-6000MHz 20dB. This RF low noise amplifier LNA is ... more50-4000MHz, NF = 0.6dB. 1PC LNA 50-4000MHz 0.6dB SPF5189 RF Amplifier.
$
3.90
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Condition: New
Location: Taiwan
Type Designator: 2N4401. Polarity: NPN. Material of Transistor: Si. Forward Current Transfer Ratio (hFE), MIN: 100. Collector Capacitance (Cc): 7 pF.
$
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Condition: New
Location: Wyckoff, United States
SEALED in ANTISTATIC bag. Material of Transistor: Si. Maximum Collector Power Dissipation (Pc): 0.36 W.
$
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Location: Gaithersburg, United States
This is one Lot (Qty. Device Marking: A3BZ. RoHS Compliant. Frequency Range: 400MHz to 2500MHz. In/Out VSWR: 1.2:1/2.0:1. IP3: +41dBm at 850MHz; +43dB ... moreat 1960MHHz; +42dBm at 2140MHz; +41dBm at 2450MHz. ).
$
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Condition: New
Location: Bulgaria
2T391A2 Si Transistor. Made in USSR.
$
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Condition: New
Location: Costa Mesa, United States
Two Isolated Transistors and a Darlington Connected Transistor Pair. ECG904, General Purpose Transistor Array. Two Isolated Transistors and a Darlington ... moreConnected Transistor Pair. Matched Monolithic General Purpose Transistors.
$
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Location: Gaithersburg, United States
This is one Lot (Qty. Frequency Range: DC to 2GHz. Detail Spec on Web as follows ).
$
10.99
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Location: Potomac, United States
BF1005 General Specifications This is one Lot (Qty. Current: 25mA. ).
$
19.00
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Condition: New
Location: China
: SPF5189Z. Maker :RFMD. 50MHz to 4000MHz. PA Driver Amplifier. Low Noise, High Linearity Gain. High Linearity: OIP3=39.5dBm at 1960MHz. Flexible Biasing ... moreOptions: 3V to 5V, Adjustable Current.
$
14.15
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Condition: New
Location: Villa Park, United States
Polarity: NPN. Maximum Collector Power Dissipation (Pc): 90 W. Forward Current Transfer Ratio (hFE), MIN: 20. Maximum Collector Current 'Ic max': 15 A.
$
11.14
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Condition: New
Location: Lewis, United States
Zigbee 2.4GHz RF Front End, PA, LNA, RF matching components. Contains PA, LNA, switches, RF-matching, and balun for simple design of high performance ... morewireless applications.
$
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Condition: Brand New
Location: China
DC 12V/5V 10W DC Micro Hydro Generator Tap Water Flow Hydraulic DIY high power flow generator motor,Micro Hydro Generator. 1 x Micro Hydro Generator (12V ... more5V ). Appearance: generator surface cleaning, no corrosion, the structure is strong.
$
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Location: Potomac, United States
This is one Lot (Qty. hfe: 50 to 200 at 6V/5mA. Spec see Data Sheet at Vbeo: 1.5V. Insertion Gain: 16dB typ at 1GHz (6V/15mA). ).
$
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Location: Huntington Beach, United States
Part:BFR93A, Markings R2P. NPN 300mW 6GHz Low Noise RF Wideband Transistor SMD SOT23. NPN 6 GHz Wideband Transistor. RF wideband amplifiers and oscillators. ... moreProcured in the USA.
$
3.90
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Condition: New
Location: Taiwan
Type Designator: 2SD571. Polarity: NPN. Material of Transistor: Si. 1F OFFICE 1FB1-1 (4). Forward Current Transfer Ratio (hFE), MIN: 90.
$
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Condition: New
Location: Starkville, United States
ITEM LOCATION Lot 12 Transistors Military RCA PNP Ge Germanium Transistor JANCRC 2N1184 Tested plus Mounting Kits. Gain is at collector current of 100 ... morema. Sold AS-IS. Shipping weight 4 ounces. Tracking is included in shipping charge. Better get it now before it flies out the window!
$
9.50
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Condition: New – Open box
Location: Paterson, United States
Type Designator: 2N3725. Polarity: NPN. Material of Transistor: Si. Wait for the final invoice which will reflect the savings. Maximum Collector Power ... moreDissipation (Pc): 0.8 W. Maximum Collector Current |Ic max|: 0.5 A.
$
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Location: Chula Vista, United States
Manufacturer: Qorvo. Technology: SiGe. Product Category: RF Amplifier. Product Type: RF Amplifier. Subcategory: Wireless & RF Integrated Circuits. Test ... moreFrequency: 2.4 GHz. Gain: 16.5 dB. P1dB - Compression Point: 18.7 dBm.
$
29.00
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Condition: New
Location: China
Download : 40MHz - 3000MHz Flat Gain High Linearity Gain Block. Avago Technologies’ MGA-30689 is a flat gain, high. achieved through the use of Avago ... moreTechnologies’ proprietary. • Flat Gain 14dB +/-0.5dB, 40MHz to 2600MHz.
$
5.90
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Condition: New – Open box
Location: Taiwan
Type Designator: 2SB649A. Polarity: PNP. Material of Transistor: Si. Forward Current Transfer Ratio (hFE), MIN: 60. Collector Capacitance (Cc): 27 pF.
$
49.00
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Condition: New
Location: Ukraine
Analog: 154NU70, 2N193, 2N445, 2N94, 2SD75, T321N. The main technical characteristics of the MP38 transistor The mass of the transistor is not more than ... more2.0 g. • Transistor structure: n-p-n. • fh21b - The limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter and a common base: not less than 2 MHz;.
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Location: San Jose, United States
Frequency: 1575MHz ~ 1610MHz. Category: RF/IF and RFID, RF Amplifiers. Mounting Type: Surface Mount.
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Location: Morgan Hill, United States
The Qorvo® SGA8343Z is a high-performance Silicon. The SGA8343Z is optimized for 3V operation but can be biased. Germanium Heterostructure Bipolar Transistor ... more(SiGe HBT). designed for operation from DC to 6GHz.
$
21.20
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Condition: Neu
Location: China
Using two cascaded, it is suitable for weak signal detection LNA low noise. - Power gain: 60dB 500M. 1 RF Wideband Amplifier. - Working frequency: 0.1M-2G. ... more- Low noise factor NF=2.0, can be used as RF preamplifier.
$
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Location: Reno, United States
Polarity: NPN. Material of Transistor: Si. Maximum Collector Current |Ic max|: 0.1 A.
$
4.17
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Condition: Neu
Location: China
1 x LNA 50-4000MHz SPF5189 RF Amplifier. This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. LNA: 50-4000mhz. NF: SPF5189Z. In the case of amplifying ... moreweak signal, the noise of the amplifier itself may be very serious, so it is hoped that this noise will be reduced to improve the signal-to-noise ratio of the output.
$
4.00
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Condition: New
Location: Ukraine
Microwave diode D405A silicon point mixing. 1 mA, 8.5 dB, 20 mW. The mass of the diode is not more than 4.5 g. • Continuous dissipated microwave power: ... more20 mW;. • Pulse dissipated power: 300 mW;. • Conversion losses: not more than 8.5 dB;.
$
5.00
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Condition: New
Location: China
Maker :Vishay Microsemi PHI. High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA. · Ftau - 4.5 GHz @ 10v, 75mA. RF & MICROWAVE DISCRETE ... moreLOW POWER TRANSISTORS.
$
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Location: Chula Vista, United States
• 100 Vdc surge, 100 ms. • Compatible to most industry standard DC-DC converters, including VI Chip MIL PRM. • 50 Vin max. • Designed for Pb solder SMT ... moreassembly. Assembly Process Compatibility. • Wireless Communications.
$
25.00
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Location: United States
Part #: LT5512EUF#TR. Surface Mount RF Double Balanced Mixer ICs. Manufacturer: Linear Technology. RF Down Converter. Cellular, HF, ISM, PCS, UHF, VHF, ... moreWMTS. 16 Pin WQFN (Exposed Pad).
$
2.50
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Condition: Seller refurbished
Location: Rainier, United States
THREE SC2721 NPN and THREE SA1154 PNP by NEC, RECOVERED FROM OBSOLETE ANALOG SYSTEMS, SPARE BOARDS INVENTORY. Collector Capacitance (Cc): 13 pF. Material ... moreof Transistor: Si. Collector Capacitance (Cc): 25 pF.
$
58.00
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Condition: New
Location: United States
The RCA McIntyre's C30902E is one of the best SiAPD in the optical detector industries, far better than the Hamamatsu or other AD sensors. Spectral Response ... moreRange: 400-1,000nm@10% point.
$
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Location: Kissimmee, United States
Transistor Model: 2SC2714-Y 2SC2714 C2714 QY. Markings: QY. RF TRANS NPN 30V 550MHZ SMINI. RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini. ... moreTransistor Type: NPN. Installation Type: SMD Surface Mounted, Pins Are Ready To Solder.
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Location: Chula Vista, United States
Single matching circuit for 200 to 3800 MHz. We’re e-liquidators.
$
4.27
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Condition: Neu
Location: China
This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. 1PC LNA 50-4000MHz 0.6dB SPF5189 RF Amplifier. 0.2-1500MHz 60dB. LNA: 50-4000Mhz. Amplifier ... moreGain: 60dB. Amplifier gain This product can be applied to various RF receive front-end and increases communication distance.
$
4.76
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Condition: New
Location: Addison, United States
Transistor: BC546. Polarity: NPN. Material of Transistor: Si. Forward Current Transfer Ratio (hFE), MIN: 110. Collector Capacitance (Cc): 6 pF.
$
4.50
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Condition: New
Location: Ukraine
MP39 (МП39) P-N-P~ AC540 / 2N273 ex-USSR Ge PNP . GERMANIUM PNP TRANSISTOR Similar 2N273 or AC540. MP13 - MP39 - MP42 P-N-P Germanium Transistors for ... moreFuzz Face Guitar pedal. MP39 МП39 p-n-p 0,15 0,5 15 15 15 0,02 12.45 60 - 85.
$
1.55
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Condition: New
Location: China
Body Type: Axial. 3、Wire winding on ceramic rods and then soldering the joints to produce accurate resistance values and extend the life of the product. ... more5, excellent heat resistance, resistance temperature coefficient is small, linear change.
$
95.00
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Condition: New
Location: China
The part is designed using Qorvo's proven standard 0.5um E/D pHEMT production process. The TGA2706-SM provides a nominal 34 dBm of output power at an ... moreinput power level of 12 dBm with a small signal gain of 31 dB.
$
69.00
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Condition: New
Location: China
The HMC1040LP3CE is a self-biased GaAs MMIC. and image reject mixers. The HMC1040LP3CE features. Download : GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 24 - ... more43.5 GHz. Low Noise Amplifier housed in a leadless 3x3 mm.
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