|
Order by:
Available to:
eBay Affiliate Links
|
Buy It Now
$3.00 Shipping Condition: New Location: China • High IP3 and Po at low DC power consumption. 4 GHz with a unique combination of low noise and high IP3 making this amplifier ideal for sensitive high ... moredynamic range receiver applications. 0.05-4 GHz 50 ohm.
Buy It Now
$3.00 Shipping Condition: New Location: China Avago Technologies MGA-31189 is a 0.25W high gain. This device uses Avago Technologies proprietary 0.25um. Maker :AVAGO. Download : 0.25W High Gain Driver ... moreAmplifier. with good gain flatness Driver Amplifier MMIC, housed.
Buy It Now
Free Shipping Condition: New Location: Lewis, United States Wideband 2GHz Differential OpAmp Lo Noise. # Fully Differential Architecture. # Power-Down Capability: 0.65 mA. Case: QFN-16. Negative Rail. # OIP3: 42 ... moredBm at 70 MHz. # OIP2: 78 dBm at 70 MHz.
Buy It Now
$3.00 Shipping Condition: New Location: 福田区, China The RF2046 is a general purpose, low cost RF amplifier. Maker: RFMD. amplification in wireless voice and data communication. • IF or RF Buffer Amplifiers. ... more50Ω gain block. Applications include IF and RF.
Buy It Now
$8.16 Shipping Condition: New – Open box Location: Chambersburg, United States New in box BLONDER-TONGUE CMA-b LOW NOISE SOLID STATE VHF PREAMPLIFIER channel 6 stock number 4706 comes with instruction Manuel and parts Other channels ... moreavailable in my other listings
Buy It Now
Free Shipping Condition: New – Open box Location: San Jose, United States 16 dB front-end attenuator. 10 MHz to 300 MHz input frequency. Low current consumption: 17 mA.
Buy It Now
$6.56 Shipping Condition: New Location: Canada
Buy It Now
$6.70 Shipping Condition: New Location: Taiwan 2SD288 / D288 NPN 20W 30V 2A Transistor- NOS. Type Designator: 2SD288. Polarity: NPN. Material of Transistor: Si. OFFICE 5F 5E5L 1-4 BOX22 CONFIRM. Forward ... moreCurrent Transfer Ratio (hFE), MIN: 40.
Buy It Now
Free Shipping Condition: New – Open box Location: Gaithersburg, United States This is one Lot (Qty. This part has device marking: Dm. Gain (min): 9.5dB at 12GHz;. Super Low NF: 1.0dB max at 12GHz;. 12GHz: NF=0.90dB Gain=11.5dB. ... more4GHz: NF=0.41dB Gain=16.5dB. 8GHz: NF=0.62dB Gain=12.8dB. ).
Buy It Now
Free Shipping Condition: New Location: Chula Vista, United States Base Product Number: PMA3. Frequency: 500MHz ~ 8GHz. RF Type: LTE, Radar, SATCOM, UMTS, WiFi, WiMAX, WLAN. Category: RF and Wireless, RF Amplifiers. We’re ... moree-liquidators. P1dB: 20.7dBm. Mounting Type: Surface Mount.
Buy It Now
$10.00 Shipping Condition: New Location: Ukraine Analogue: 106NU70, 2SD37, 2SD75A. Main technical characteristics of the MP37A transistor The mass of the transistor is no more than 2.0 g. • Transistor ... morestructure: n-p-n. • fh21b — Limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: not less than 1 MHz;.
Buy It Now
Free Shipping Condition: New Location: China The ad831 has a low distortion, wide dynamic range, single chip mixer, suitable for such as HF and VHF Receiver RF-IF frequency, DMR base station in the ... moresecond mixer, a DC - baseband conversion, quadrature modulation and demodulation, and ultrasound imaging, doppler frequency shift detection and other applications.
Buy It Now
Free Shipping Condition: New Location: Monroe Township, United States 1PC Chicken Waterer Automatic Poultry Water Feeder Poultry Water Feeder Chicken. Features the aluminum alloy, PCB and stainless steel material, which ... morehas high durability, not easy to deform. - External use of 1.5 thick aluminum plate and stainless steel die stamping.
Buy It Now
$3.00 Shipping Condition: New Location: China The HMC517LC4 is ideal for use as a LNA or driver. The HMC517LC4 chip is a high dynamic range GaAs. HMC517LC4 provides 19 dB of small signal gain, 2.5. ... moreimage reject mixers. The HMC517LC4 allows the use.
Buy It Now
$2.99 Shipping Condition: New Location: China This AD630 phase-locked amplifier is an integrated preamplifier OPA627 and 4-order ultra-low-pass Butterworth filter, forming a minimum system of phase-locked ... moreamplification, which can detect and extract weak signals, but also can be used for AD630 modulation function.
Buy It Now
$4.50 Shipping Condition: New Location: China Electrical Specification -GNSS Antenna. Gain:36±2(include LNA). Current Draw: 4-6V ≤45mA. Nominal Impedance:50ohms. Working temperature:-40~+75. Polarization: ... moreRight hand circular.
Buy It Now
$5.34 Shipping Condition: Neu Location: China Frequency range of module: 10M-6GHz. - Output interface: SMA female. Input and output impedance: 50 ohms. Usually it costs about 30USD-50USD. - Weight: ... more66g/0.1lb (including main unit + type-c cable).
Buy It Now
Free Shipping Condition: New Location: East Brunswick, United States 2N5635 By UK. Part Number 2N5635. You are not 100% satisfied with an item you received?. Whatever the reason is, you won't be stuck with an item you cannot ... moreuse or you do not want. New and Original UK.
Buy It Now
$2.99 Shipping Condition: New Location: China OPA855 transimpedance amplifier is a high-speed and high-bandwidth IV conversion circuit. The chip has a nominal gain bandwidth product of 8GHz. The minimum ... morecurrent resolution of the module is 0.1uA.
Buy It Now
$3.25 Shipping Condition: New Location: Hillsborough, United States Material of Transistor: Si. Forward Current Transfer Ratio (hFE), MIN: 60. Collector Capacitance (Cc): 14 pF.
Buy It Now
Free Shipping Condition: New Location: Huntington Beach, United States Part:BFR93A, Markings R2P. NPN 300mW 6GHz Low Noise RF Wideband Transistor SMD SOT23. NPN 6 GHz Wideband Transistor. RF wideband amplifiers and oscillators. ... moreProcured in the USA.
Buy It Now
$2.78 Shipping Condition: Neu Location: China This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. LNA: 50-4000mhz. NF: SPF5189Z. In the case of amplifying weak signal, the noise of the amplifier ... moreitself may be very serious, so it is hoped that this noise will be reduced to improve the signal-to-noise ratio of the output.
Buy It Now
$5.10 Shipping Condition: New – Open box Location: Temple, United States SE6021 Transistor Datasheet. Type Designator: SE6021. Material of transistor: Si. Maximum collector power dissipation (Pc), W: 0.3. Maximum collector ... morecurrent |Ic max|, A: 1. Collector capacitance (Cc), pF: 15.
Buy It Now
$5.40 Shipping Condition: New – Open box Location: Los Angeles, United States Equivalent to 2N1744. Polarity: PNP. Material of Transistor: Ge. Forward Current Transfer Ratio (hFE), MIN: 10. Collector Capacitance (Cc): 1.5 pF.
Buy It Now
$6.70 Shipping Condition: New Location: Taiwan Type Designator: BC637. Polarity: NPN. Material of Transistor: Si. We will respond as soon as possible. OFFICE 5E6L 1-2 BOX1 CONFIRM. OFFICE 5f 5f8 1-1.
Buy It Now
$3.20 Shipping Condition: New Location: United States We are listed in the NEEQ China, and we are devoted to becoming the leader of ICT Testing Industry in the Asian-Pacific region. TOJOIN DC-8GHz SMA RF ... moreCoaxial Attenuator. This SMA Male to SMA Female RF Coaxial Attenuator is the perfect solution for your 8GHz signal attenuation needs.
Buy It Now
Free Shipping Condition: New Location: Chula Vista, United States Manufacturer: Qorvo. Technology: SiGe. Product Category: RF Amplifier. Product Type: RF Amplifier. Subcategory: Wireless & RF Integrated Circuits. Test ... moreFrequency: 2.4 GHz. Gain: 16.5 dB. P1dB - Compression Point: 18.7 dBm.
Buy It Now
Free Shipping Condition: New Location: Gaithersburg, United States 50 PIECES(ON CUT TAPE) ERA-1SM MINI-CIRCUITS SOT-89 MMIC AMPLIFIER DC- 8GHz ON CUT TAPE On May-14-13 at 00:48:41 PDT. Seller added the following information:
Buy It Now
$3.00 Shipping Condition: New Location: China Download :High Linearity Low Noise Amplifi er. GaAs MMIC Low Noise Amplifi er (LNA). linearity make this an ideal choice as a low noise amplifi er. High ... morelinearity performance. has low noise and high linearity achieved through the.
Buy It Now
$3.00 Shipping Condition: New Location: China : TQP3M9028 3M9028. Maker : TRIQUINT [TriQuint Semiconductor]. • IF Amplifier, RF Driver Amplifier. High Linearity Low Noise Amplifier / Gain Block. • ... moreNo RF components needed; 50 Ohm Gain Block. Product Features.
Buy It Now
$3.00 Shipping Condition: New Location: China FM Tuner Applications. Maker:TOSHIBA. We will reply you ASAP.
Buy It Now
$3.00 Shipping Condition: New Location: China The part is designed using Qorvo's proven standard 0.5um E/D pHEMT production process. The TGA2706-SM provides a nominal 34 dBm of output power at an ... moreinput power level of 12 dBm with a small signal gain of 31 dB.
Buy It Now
$3.00 Shipping Condition: New Location: China This amplifier is an upgraded version of the 5-3500MHz amplifier. The typical gain is 35dB. Amplification gain: Gain=35dB (typical). This amplifier is ... moreused for low-noise amplification of various radio frequency signals, which can increase the receiving effect.
Buy It Now
$2.99 Shipping Condition: New – Open box Location: Edinburg, United States NEW & ORIGINAL . Test Frequency1GHz. RF TypeISM, PCS, WLL, 802.16/WiMax.
Buy It Now
Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot (Qty. Size of the PCB 1"x1"x0.031", FR-4 material, double-sided with solid plated ground plane on the back. Will fit SMA/SMB or MCX RF ... moreconnector with 0.031" board space. Have a fun with it! ).
Buy It Now
Free Shipping Condition: New – Open box Location: Winston Salem, United States NEW*Loose Stock Item) PHILIPS ECG 398 2SA968 SI PNP TRANSISTOR Type Designator: ECG398 Material of transistor: Si Polarity: PNP Maximum collector power ... moredissipation(Pc) W: 25 Maximum collector-base voltage |Ucb|. V: 200 Maximum collector-emitter voltage |Uce|. V: 150 Maximum emitter-base voltage |Ueb|. V: 0 Maximum collector current |Ic max|. A: 2 Maximum junction temperature(Tj) °C: 150 Transition frequency(ft) MHz: 5 Collector capacitance(Cc) PF: Forward current transfer ratio(hFE) Min: 100 Noise Figure. DB: Package of ECG398 transistor: TO220
Buy It Now
$5.80 Shipping Condition: New – Open box Location: Bulgaria PNP Transistors. HFE= 30.60. • The structure of the transistor: pnp. • h21e - Static current transfer ratio of the transistor small signal for the common-emitter ... moreand common-base, respectively, 30. 60.
Buy It Now
$5.34 Shipping Condition: Neu Location: China WYDZ-LNA-30dB 10M-12G Low Noise Amplifier LNA Amplifier with Good Flatness & Gain over 30dB. The flatness of the full frequency band is very good, with ... morea flatness of no more than 2dB. It can be applied directly as a system module or as a validation platform.
Buy It Now
$3.00 Shipping Condition: New Location: 福田区, China : NE32484A. The NE32484A is a Hetero Junction FET that utilizes the. FEATURES : C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. low noise and ... morehigh associated gain make it suitable for DBS. Channel Temperature Tch 150 ˚ C.
Buy It Now
$3.40 Shipping Condition: New Location: China (0.1-2GHz Gain 64dB. 0.01-2000MHz Gain 32dB. gain: 32DB input and output impedance: 50 ohms. 1-3000MHz Gain 20dB. 1PCxLow Noise Amplifier Module. Input ... moresignal: ≤0 DBM(>0 DBM Input, the output signal has been distorted.).
Buy It Now
Free Shipping Condition: Neu Location: China 10M-6GHz Low Noise Amplifier Gain 20DB High Flatness LNA RF Signal Driving Receiver Front End. Module frequency range: 10M-6GHz. - 1 x Amplifier w/ Aluminum ... moreAlloy Shell. Receiver system (FM radio receiver, radar receiver, etc.).
Buy It Now
$3.00 Shipping Condition: New Location: China This amplifier is an upgraded version of the 5-3500MHz amplifier. The typical gain is 35dB. Amplification gain: Gain=35dB (typical). This amplifier is ... moreused for low-noise amplification of various radio frequency signals, which can increase the receiving effect.
Buy It Now
Free Shipping Condition: New Location: Huntington Beach, United States (Original Factory Signetics). Wide-Band High-Frequency Amplifier. The NE/SA5204A is a high-frequency amplifier with a fixed insertion. the amplifier ideal ... morefor cable TV applications. The NE/SA5204A. • Frequency counters.
Buy It Now
Free Shipping Condition: New Location: Morgan Hill, United States This is one Lot (Qty. RoHS Compliant. Frequency Range: 50MHz to 850MHz. Gain: 15.5dB at 70MHz, 240MHz, 400MHz. ).
Buy It Now
$5.00 Shipping Condition: New Location: Ukraine Microwave diode D405A silicon point mixing. 1 mA, 8.5 dB, 20 mW. The mass of the diode is not more than 4.5 g. • Continuous dissipated microwave power: ... more20 mW;. • Pulse dissipated power: 300 mW;. • Conversion losses: not more than 8.5 dB;.
Buy It Now
$5.40 Shipping Condition: New – Open box Location: Los Angeles, United States Rheem Semiconductor produced transistors and diodes. Rheem struggled due to lawsuits from Fairchild over stolen process trade secrets. Rheem never stabilized ... moreand was sold to Raytheon in 1961. Material of Transistor: Si.
Buy It Now
Free Shipping Condition: New Location: Huntington Beach, United States Type Designator: BC349. 100mA, 20V, NPN, Si,AMPLIFIERTRANSISTOR, TO-92. Polarity: NPN. Material of Transistor: Si. Hi-Quality - Gold Leads. Maximum Collector ... morePower Dissipation (Pc): 0.3 W. Maximum Collector Current |Ic max|: 0.1 A.
Buy It Now
Free Shipping Condition: New Location: Myrtle Beach, United States Equivalent: 2N1163, 2N1163A, 2N1164, 2N1164A, 2N1165, 2N1165A, 2N1166, 2N1166A, D882, 2N1167A, 2N1168, 2N1169, 2N117, 2N1170, 2N1171, 2N1172, 2N1173. ... moreMaximum Collector Power Dissipation (Pc): 106 W.
Buy It Now
Free Shipping Condition: New Location: Huntington Beach, United States Polarity: NPN. Material of Transistor: Si. Mfr:GE / RCA. Forward Current Transfer Ratio (hFE), MIN: 20. Quantity:1 piece. Procured in the USA. Maximum ... moreCollector Current |Ic max|: 4 A.
Buy It Now
Free Shipping Condition: New Location: Gaithersburg, United States BFR360F General Specifications Application Note 061 W-CDMA 2.3 GHz VCO using BFR360F Application Note 150A 900 MHz Low Noise Amplifier Using the BFR360F ... moreFrequency Ft: 14GHz typ. This is one Lot (Qty. ).
Buy It Now
$6.75 Shipping Condition: New Location: Taiwan Type Designator: MJ11012. Polarity: NPN. Material of Transistor: Si. Forward Current Transfer Ratio (hFE), MIN: 2000.
Buy It Now
$2.78 Shipping Condition: Neu Location: China The low noise amplifier module has a higher gain and provides very low noise over a wide frequency range. This provides communication between the receiver ... moreand the transmitter. It is suitable for fixed gain amplification of various RF signals.
Buy It Now
Free Shipping Condition: New Location: San Jose, United States Frequency: 1575MHz ~ 1610MHz. Category: RF/IF and RFID, RF Amplifiers. Mounting Type: Surface Mount.
Buy It Now
$2.79 Shipping Condition: New Location: Edinburg, United States NEW & ORIGINAL . Test Frequency1GHz. RF TypeISM. Gain15dB ~ 16.2dB.
Buy It Now
Free Shipping Condition: New Location: Gaithersburg, United States This is one Lot(Qty. 2) of Develop PCB for 2-Stage Agilent 0.5- 6GHz Low Noise MMIC GaAs Amplifier. 5V 20dB High Gain, Part Nubmer: MGA-86563 in SOT-363(SC-70) ... morePackage with SAW Filter in between 2 MMIC amplifier. Size of the PCB 1"x1"x0.031" FR-4 material, double-sided with solid plated ground plane on the back. Will fit SMA/SMB or MCX RF connector with 0.031" board space. Please check link attached below for schematic and assembly drawing. The idea for this PCB is to provide high gain and selected narrow band of interest by using SAW filter in between two MMIC amplifier. Since the gain is very high by using 2 cascade MGA-86563. Without SAW, it could result an oscillation. the footprint for SAW filter is normal 3.00x3.00mm(2.00x2.00mm or 3.50x3.50mm can be used by manual solder with carefully workmanship) Gerenal Specifications for MGA-86563: Frequency Ragne: 500MHz- 6.0GHz Noise Figure: 1.6dB at 2.4GHz Gain: 21.8dB at 2.4GHz P1 dB: +3.1dBm at 2.4GHz IP3: +15dBm at 2.4GHz Supply: 6V/14mA Package: SOT-363 Data Sheet for MGA-86563 on Web as follows: Reference Schematic for this Develop PCB: Assembly Drawing for this Develop PCB: You can buy 10pcs MGA-86563. Link attached below:
Buy It Now
$5.40 Shipping Condition: New Location: Los Angeles, United States Polarity: NPN. Material of Transistor: Si. Forward Current Transfer Ratio (hFE), MIN: 20. Collector Capacitance (Cc): 4 pF.
Buy It Now
$2.78 Shipping Condition: Neu Location: China This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. LNA: 50-4000mhz. NF: SPF5189Z. In the case of amplifying weak signal, the noise of the amplifier ... moreitself may be very serious, so it is hoped that this noise will be reduced to improve the signal-to-noise ratio of the output.
Buy It Now
$5.34 Shipping Condition: Neu Location: China With microcircuit PHA-1H+ MMIC amplifier - 50 MHZ to 6 GHZ MMIC. BladeRF 2.0 Micro BT-100 Bias Tee Power Amplifier Module 50MHz-6GHz MMIC Antenna Amplifier ... more200mW. - Power consumption: 200mW. - The BT-100 is a wideband biased three-way TX power amplifier (PA) that draws current from the SMA connector of the bladeRF 2.0 micro.
Buy It Now
$3.00 Shipping Condition: New Location: China The HMC423MS8 / HMC423MS8E is ideal for Download : GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.6 - 1.3 GHz. Integrated LO Amplifi er w/ Pdiss
Buy It Now
$3.00 Shipping Condition: New Location: China Download : Low Noise, High Linearity, Active Bias Low Noise Amplifier. High linearity performance. loss and high linearity achieved through the use of. ... moreLow noise amplifier for cellular infrastructure for GSM.
|
|
|