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$
49.00
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Condition: New
Location: China
: TQP3M9028 3M9028. Maker : TRIQUINT [TriQuint Semiconductor]. • IF Amplifier, RF Driver Amplifier. High Linearity Low Noise Amplifier / Gain Block. • ... moreNo RF components needed; 50 Ohm Gain Block. Product Features.
$
2.70
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Condition: New
Location: Addison, United States
Transistor: 2SA733. 10pcs x 2SA733 PNP Transistor 50V 100mA Amplifier TO-92. Polarity: PNP. Material of Transistor: Si. Forward Current Transfer Ratio ... more(hFE), MIN: 40. Collector Capacitance (Cc): 12 pF.
$
18.00
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Condition: New
Location: China
The ATF-50189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT ... moreamplifiers which require high linearity and power.
$
32.00
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Condition: New
Location: China
Electrical Specification -GNSS Antenna. Gain:36±2(include LNA). Current Draw: 4-6V ≤45mA. Nominal Impedance:50ohms. Working temperature:-40~+75. Polarization: ... moreRight hand circular.
$
5.66
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Condition: Neu
Location: China
This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. 1PC LNA 50-4000MHz 0.6dB SPF5189 RF Amplifier. LNA: 50-4000Mhz. Amplifier gain This product ... morecan be applied to various RF receive front-end and increases communication distance.
$
20.82
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$5.31 Shipping
Condition: Neu
Location: China
Using two cascaded, it is suitable for weak signal detection LNA low noise. - Power gain: 60dB 500M. 1 RF Wideband Amplifier. - Working frequency: 0.1M-2G. ... more- Low noise factor NF=2.0, can be used as RF preamplifier.
$
4.09
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Condition: Neu
Location: China
1 x LNA 50-4000MHz SPF5189 RF Amplifier. This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. LNA: 50-4000mhz. NF: SPF5189Z. In the case of amplifying ... moreweak signal, the noise of the amplifier itself may be very serious, so it is hoped that this noise will be reduced to improve the signal-to-noise ratio of the output.
$
14.99
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Location: Gaithersburg, United States
This is one Lot (Qty. Frequency Range: DC to 2GHz. Detail Spec on Web as follows ).
$
3.99
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Condition: Neu
Location: China
This is a 5-6000MHz RF signal power amplifier with 20dB gain. 1PC × 5-6000MHz 20dB RF Power Amplifier. 5-6000MHz 20dB. This RF low noise amplifier LNA ... moreis 50-4000MHz, NF = 0.6dB. 1PC LNA 50-4000MHz 0.6dB SPF5189 RF Amplifier.
$
850.00
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Condition: New
Location: Gaithersburg, United States
This is one LOT (Qty. Frequency Ragne: DC to 8GHz. Gain: 11.8dB at 2GHz; 8.2dB at 8GHz. Detail Spec on Web as follows ).
$
16.99
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Condition: New
Location: Gaithersburg, United States
This is one Lot (Qty. RoHS Compliant. Frequency Range: 0.1 to 12GHz. IP3: +32dBm at 5V/40mA; +28dBm at 3V/20mA. ).
$
3.40
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Condition: New – Open box
Location: Lithuania
Type P27A ( П27A). Designed to amplify low-frequency signals in general-purpose radio engineering devices. Transistors are never used. Static current ... moretransfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 20. 60;.
$
6.00
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Condition: New
Location: Ukraine
MP40A (МП40А -) P-N-P~ OC71, OC70, OC75, 2N45, 2N215, 2N104, 2SB170. Similar to the OC75, OC76, 2N45, 2N215. MP40A P-N-P Germanium Transistors for Fuzz ... moreFace Guitar pedal. Military p-n-p Germanium Transistors New NOS Great Germanium transistors for any audio applications.
$
68.00
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Condition: New
Location: China
(0.9-3.5)GHz frequency range. The LNA uses Avago Technologies’. Low Shutdown Current. CMOS compatible shutdown pin (SD) current @ Vsd=. A CMOS-compatible ... moreshutdown pin is included. High Gain and Linearity.
$
23.00
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Condition: New
Location: China
: TQP3M9009. Maker :TRIQUINT [TriQuint Semiconductor]. 50 to 4000 MHz. 50-4000 MHz. 50 Ohm Cascadable Gain Block. 21.8 dB Gain @ 1.9 GHz. +39.5 dBm Output ... moreIP3. High input power capability.
$
19.00
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Condition: New
Location: China
: SPF5189Z. Maker :RFMD. 50MHz to 4000MHz. PA Driver Amplifier. Low Noise, High Linearity Gain. High Linearity: OIP3=39.5dBm at 1960MHz. Flexible Biasing ... moreOptions: 3V to 5V, Adjustable Current.
$
9.95
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Condition: New – Open box
Location: Granbury, United States
THIS IS FOR (1 PC) OF 2N34 BY SOLID STATE. Type Designator: 2N34. Polarity: PNP. Material of Transistor: Ge. Maximum Collector Power Dissipation (Pc): ... more0.05 W.
$
10.00
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Condition: New – Open box
Location: Paterson, United States
Characteristics of the 2N4356 bipolar transistor. You get TWO(2) of these. Wait for the final invoice which will reflect the savings. Collector Current:-1 ... moreA.
$
3.95
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Condition: New – Open box
Location: Los Angeles, United States
Specs for 2N548 Manufacturer unknown. Five available. Material of Transistor: Si. Forward Current Transfer Ratio (hFE), MIN: 20. Collector Capacitance ... more(Cc): 120 pF. Maximum Collector Current |Ic max|: 0.5 A.
$
3.99
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Condition: Neu
Location: China
This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. 1PC LNA 50-4000MHz 0.6dB SPF5189 RF Amplifier. 0.2-1500MHz 60dB. LNA: 50-4000Mhz. Amplifier ... moreGain: 60dB. Amplifier gain This product can be applied to various RF receive front-end and increases communication distance.
$
14.99
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Condition: New
Location: Potomac, United States
This is one Lot (Qty. RoHS Compliant. Frequency Range: DC to 5GHz. Detail Spec on Web as follows IP3: +35dBm at 850MHz; +32dB at 1950MHHz. ).
$
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Condition: New
Location: Potomac, United States
This is one Lot (Qty. Frequency Range: DC to 3.2GHz. Detail Spec on Web as follows In/Out VSWR: 1.5:1/1.9:1. ).
$
13.99
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Condition: New
Location: Potomac, United States
Date Code: 0109. The SA605 combines the functions of NXP SA602A and SA604A, but features a higher mixer input intercept point, higher IF bandwidth (25 ... moreMHz) and temperature compensated RSSI and limiters permitting higher performance application.
$
21.99
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Condition: New
Location: Potomac, United States
This is one Lot (Qty. At 1.5GHz, I got 25.5dB gain and 4GHz with 26.2dB gain. At 8GHz I only got 14.6dB gain. I also designed a PCB for this MMIC Frequency ... moreRange: 1.5 to 8GHz. Gain: 23.1dB at 4GHz; 15.4dB at 8GHz. ).
$
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Condition: New
Location: Potomac, United States
This is one Lot (Qty. Frequency Range: DC to 5GHz. In/Out VSWR: 1.4:1/1.4:1. IP3: +32.5dBm at 850MHz; +31.6dB at 2GHz. ).
$
5.40
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Condition: New
Location: Стара Загора, Bulgaria
D405A diode silicon mixing point. Diodes straight polarity: D405, D405A, D405B. Military Microwave Mixer Diode 8.2.14.2GHz. Type of diode and circuit ... moreconnections are on the case. diode Weight not more than 4.5 grams.
$
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Condition: New
Location: Potomac, United States
This is one Lot (Qty. hfe: 50 to 200 at 6V/5mA. Spec see Data Sheet at Vbeo: 1.5V. Insertion Gain: 16dB typ at 1GHz (6V/15mA). ).
$
5.00
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Condition: New
Location: Glencoe, United States
This is the Analog Devices ADL5611 evaluation board layout. The Analog Devices ADL5611 features the following This is for the PCB only. High dynamic range ... moregain block Input and output internally matched to 50 Ω.
$
29.00
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Condition: New
Location: China
Part No.: MAR-6SM+ MAR-6SM. We will reply you ASAP. Internally Matched to 50 Ohms •.
$
39.00
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Condition: New
Location: China
Avago Technologies MGA-31189 is a 0.25W high gain. This device uses Avago Technologies proprietary 0.25um. Maker :AVAGO. Download : 0.25W High Gain Driver ... moreAmplifier. with good gain flatness Driver Amplifier MMIC, housed.
$
25.00
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Condition: New
Location: China
: TQP3M9035. The TQP3M9035 is a high-linearity, low noise gain block. The TQP3M9035 has the benefit of having high linearity. The TQP3M9035 covers the ... more50−6000 MHz frequency. Maker :TRIQUINT [TriQuint Semiconductor].
$
35.00
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Condition: New
Location: Romania
Type Designator: BLV12. Material of Transistor: Si. Maximum Collector Current |Ic max|: 6 A. Forward Current Transfer Ratio (hFE), MIN: 25. Maximum Collector ... morePower Dissipation (Pc): 100 W.
$
3.50
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Condition: New – Open box
Location: Temple, United States
BiPolar PowerTransistor. Other Transistors. Power Dissipation-Max (Abs). Sub Category. Tin/Lead (Sn/Pb). Surface Mount. JESD-609 Code. Polarity/Channel ... moreType.
$
13.00
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Condition: New
Location: Gaithersburg, United States
This LOT is 5 pieces of New Hittite Microwave DC-5GHz InGap HBT MMIC Amplifier. Part Number: HMC480ST89ETR in SOT-89 Package. RoHS Compliant General Spec ... morefor HMC480ST89E: Frequency Range: LF- 5GHz Gain: 19dB at 1GHz; 16dB at 2GHz Noise Figure: 3.25dB to 4GHz. 4dB 4-5GHz P1dB: +19dBm typ. at 2.5GHz OIP3: +34dBm, Package: SOT-89 Spec see Data Sheet at: I have develop PCB made for this MMIC in my eBay store: Designer Kit for SOT-89:
$
8.75
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Condition: New – Open box
Location: Los Angeles, United States
I only ship to verified PayPal addresses in the lower 48 states. I leave feedback for everyone and really appreciate it when you do the same for me. Buy-it-Now ... moreis for offers to purchase multiple parts. Not to reduce the price of 1. This sale is for 1: RCA 2N586 Germanium PNP Full Length leads; Please take a look at the picture. If you are looking for some 2N586 transistors you will be pleased with these. They won't disappoint you. Enjoy! Enjoy! Check out my! Powered by The free listing tool. List your items fast and easy and manage your active items.
$
9.00
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Condition: New
Location: China
Download : 400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier. The SPF-5043Z is a high performance pHEMT MMIC LNA designed for. • Low noise, high linearity ... moregain block applications. • P1dB = 22 dBm @ 1900 MHz.
$
3.99
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Condition: New
Location: China
Up for auction is a NEW- old stock. Never used, set of 10 pcs of BFG591 Wideband 7GHZ transistors in SOT223 SMD package. Build a power amplifier for front-end ... moreor a local oscillator driver for your QRP Tx. Similar(not equivalent) to 2N5109 or 2N3866 etc. The item(10 pcs) will be shipped with registered priority air-mail. Check out my! I always combine shipping! Check my new website for ham radio and electronic projects sv1afn.com
$
11.99
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Condition: New
Location: Gaithersburg, United States
This is one Lot (Qty. 20) of New Avago/Agilent/HP Low Current High Performance NPN Bipolar RF Transistor. Device Marking: 305N. Gain: 13dB at 900MHz. ... moreIP3: +17dBm. P1dB: +7dBm.
$
89.00
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Condition: New
Location: China
• 50 Ohm Cascadable Gain Block. • High Gain: 25 dB typ. at 850 MHz. • High Output IP3: 25 dBm typ. at 1950 MHz. • PA Driver Amplifier. • IF Amplifier. ... more• Low Current Draw: 35mA typ.
$
28.00
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Condition: New
Location: China
Maker :RFHIC. • GaAs E-pHEMT. We will reply you ASAP. • CATV Amplifier. • Pb Free / RoHS Standard.
$
1.99
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Condition: New
Location: Miami, United States
TI TLC2262AID Low Noise LinCMOS RAIL-TO-RAIL Operational Amplifier SOIC-8. Part Number: TLC2262AID. Technology: LinCMOS. The noise performance has been ... moredramatically improved over previous generations of CMOS amplifiers.
$
4.58
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Condition: Neu
Location: China
This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. 1PC LNA 50-4000MHz 0.6dB SPF5189 RF Amplifier. LNA: 50-4000Mhz. 0.2-1500MHz 60dB. Amplifier ... moreGain: 60dB. Amplifier gain This product can be applied to various RF receive front-end and increases communication distance.
$
13.99
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Condition: New
Location: Ukraine
Analogue: 106NU70, 2SD37, 2SD75A. Main technical characteristics of the MP37A transistor The mass of the transistor is no more than 2.0 g. • Transistor ... morestructure: n-p-n. • fh21b — Limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: not less than 1 MHz;.
$
13.95
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Condition: New
Location: Morgan Hill, United States
HIGH DYNAMIC RANGE. LOW IM DISTORTION: -40 dBc. Tape and Reel sealed.
$
12.03
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Condition: New
Location: Kissimmee, United States
Reference: BC639 / BC639 F J08. Type Designator: BC639. 10 x BC639 TO-92 Transistors. Material of Transistor: Si. Transistor Case Style: TO-92. of Pins: ... more3. Forward Current Transfer Ratio (hFE), MIN: 40.
$
1.50
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Condition: New
Location: Harbor City, United States
$
3.00
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Condition: New
Location: Sachse, United States
Type Designator: D40P3. Polarity: NPN. Material of Transistor: Si. Maximum Collector Power Dissipation (Pc): 6.25 W. Maximum Collector Current |Ic max|: ... more0.5 A. Collector Capacitance (Cc): 6 pF. Forward Current Transfer Ratio (hFE), MIN: 40.
$
19.95
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Condition: New
Location: Chula Vista, United States
RF Type: Cellular, PCS, PHS, WLL. Frequency: 40MHz ~ 3.6GHz. This is a 4 NXP IC AMP CELL 40MHZ-3.6GHZ SOT89-4 MMG3003NT1, in good condition, ready to ... morebe use. Manufacturer: NXP Semiconductors / Freescale.
$
2.50
1d 23h 19m 7s
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Condition: Seller refurbished
Location: Rainier, United States
THREE SC2721 NPN and THREE SA1154 PNP by NEC, RECOVERED FROM OBSOLETE ANALOG SYSTEMS, SPARE BOARDS INVENTORY. Collector Capacitance (Cc): 13 pF. Material ... moreof Transistor: Si. Collector Capacitance (Cc): 25 pF.
$
10.12
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Condition: Neu
Location: China
NEO-M8N-0 M8 Concurrent GNSS LCC Module. NEO-M8N with Mini Antenna. NEO-M8N with Big Antenna. Storage temp. –40° C to 85° C (NEO-M8N/Q). 2.7 V to 3.6 ... moreV (NEO-M8N/Q). Oscillator TCXO (NEO-M8N/Q). onboard SAW band pass filter (NEO-M8N/Q).
$
3.80
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Condition: New – Open box
Location: Everett, United States
• Wideband, DC to 1 GHz. • Exact foot print substitute for MSA-0485.
$
4.29
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Condition: Neu
Location: China
This RF low noise amplifier LNA is 50-4000MHz, NF = 0.6dB. LNA: 50-4000mhz. NF: SPF5189Z. In the case of amplifying weak signal, the noise of the amplifier ... moreitself may be very serious, so it is hoped that this noise will be reduced to improve the signal-to-noise ratio of the output.
$
99.00
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$8.16 Shipping
Condition: New – Open box
Location: Chambersburg, United States
New in box BLONDER-TONGUE CMA-b LOW NOISE SOLID STATE VHF PREAMPLIFIER channel 6 stock number 4706 comes with instruction Manuel and parts Other channels ... moreavailable in my other listings
$
21.99
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Condition: New
Location: Gaithersburg, United States
This is one Lot (Qty. Data Sheet Detail Spec and App Note on Web as follows IP3: +30.5dBm at 2GHz. ).
$
10.00
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Condition: New – Open box
Location: Ukraine
GT310B ( russian ГТ310Б) Input resistance in a circuit with a common base at Ukb = 5 V, Ie = 1 mA, no more than 38 Ohm. Output conductivity in a circuit ... morewith a common base at Ukb \u003d 5 V, Ie \u003d 1 mA, f \u003d 50-1000 Hz, no more. 3 µS.
$
4.25
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Condition: New
Location: Los Angeles, United States
Polarity: NPN. Material of Transistor: Si. Forward Current Transfer Ratio (hFE), MIN: 100. Collector Capacitance (Cc): 8 pF.
$
11.99
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Condition: New
Location: Gaithersburg, United States
This is one Lot (Qty. Frequency Range: DC to 5000MHz. Detail Spec on Web as follows IP3: +20.0dBm at 850MHz; +19.6dBm at 1950MHHz. ).
$
5.49
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Condition: New
Location: Wyckoff, United States
Original Philips BU2508DF Transistor. FULLY INSULATED. Spec's: Si-N+Di CTV-HA 1500 700V 8A 45W Iso DAMPER-DIODE TRANSISTOR 16c. Lead Free. Brand: ... morePhilips. Transistor. Si-N+Di CTV-HA 1500 700V 8A 45W Iso DAMPER-DIODE TRANSISTOR 16c/ 1 Package. Go Company has been selling semiconductors since 1989. We only stock original(O.E.M) products. GO Company Product Code: BU2508DF-PHI P.S. It is assumed that"For Sale" you are qualified to instal semiconductors. No warranty is offered on semiconductors without"due course" P.S.S. GO Company stocks thousands of original Semiconductors. Please email us the semiconductors number, how many you require and we will advise a price.
$
28.00
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Condition: New
Location: 福田区, China
: NE32484A. The NE32484A is a Hetero Junction FET that utilizes the. FEATURES : C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. low noise and ... morehigh associated gain make it suitable for DBS. Channel Temperature Tch 150 ˚ C.
$
1291.50
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Condition: New: Never Used
Location: Inglewood, Australia
10 MHz to 500 MHz. Unit Weight Part # Aliases Wireless & RF Integrated Circuits. Up-Down Converters. Product Type Pd - Power Dissipation Maximum Input ... moreFrequency.
1 2 3 4 5 6 7 8 9 10 11
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